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BLL6H0514L-130 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BLL6H0514L-130
기능 LDMOS driver transistor
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BLL6H0514L-130 데이터시트, 핀배열, 회로
DataSheet.in
BLL6H0514L-130;
BLL6H0514LS-130
LDMOS driver transistor
Rev. 1 — 9 August 2010
Preliminary data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
Table 1. Application information
Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation f
tp δ
VDS PL Gp RLin ηD
(MHz)
(μs) (%) (V) (W) (dB) (dB) (%)
pulsed RF
960 to 1215 128 10 50 130 19 10 54
1200 to 1400 300 10 50 130 17 10 50
Pdroop(pulse)
(dB)
0
0
tr
(ns)
15
15
tf
(ns)
8
8
1.2 Features and benefits
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (0.5 GHz to 1.4 GHz)
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range




BLL6H0514L-130 pdf, 반도체, 판매, 대치품
DataSheet.in
NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
6.1 Ruggedness in class-AB operation
The BLL6H0514L-130 and BLL6H0514LS-130 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: VDS = 50 V; IDq = 50 mA; PL = 130 W; f = 1.2 GHz to 1.4 GHz; tp = 300 μs;
δ = 10 %.
7. Application information
7.1 Impedance information
Table 8.
f
MHz
1200
1300
1400
Typical impedance
ZS
Ω
1.21 j3.44
1.56 j4.49
2.21 j4.86
ZL
Ω
2.40 j0.63
2.30 j0.87
2.00 j1.71
gate
ZS
Fig 1. Definition of transistor impedance
drain
ZL
001aaf059
BLL6H0514L-130_0514LS-130
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 August 2010
© NXP B.V. 2010. All rights reserved.
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BLL6H0514L-130 전자부품, 판매, 대치품
DataSheet.in
NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
Table 9. List of components
See Figure 7 for component layout.
Component
Description
C1 multilayer ceramic chip capacitor
C2, C11
multilayer ceramic chip capacitor
C3, C4, C6, C9, C10 multilayer ceramic chip capacitor
C5, C7, C8
multilayer ceramic chip capacitor
C12 electrolytic capacitor
C13 multilayer ceramic chip capacitor
R1 SMD resistor
R2 wirewound lead resistor
Value
Remarks
10 μF; 50 V
1 nF
[1]
100 pF
[2]
43 pF
[2]
220 μF; 63 V
1 nF
[3] fitted vertically in
series with R2
10 Ω
SMD 0603
2.61 Ω; 0.25 W
fitted in series
with C13
[1] American Technical Ceramics type 700A or capacitor of same quality.
[2] American Technical Ceramics type 100A or capacitor of same quality.
[3] American Technical Ceramics type 100B or capacitor of same quality.
BLL6H0514L-130_0514LS-130
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 August 2010
© NXP B.V. 2010. All rights reserved.
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BLL6H0514L-130

LDMOS driver transistor

NXP Semiconductors
NXP Semiconductors

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