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Número de pieza | LM49150 | |
Descripción | Mono Class D Audio Subsystem | |
Fabricantes | National Semiconductor | |
Logotipo | ||
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No Preview Available ! LM49150
March 4, 2009
Mono Class D Audio Subsystem with Earpiece Driver and
Stereo Ground Referenced Headphone Amplifiers
General Description
The LM49150 is a fully integrated audio subsystem designed
for portable handheld applications such as cellular phones.
Part of National's Power Wise® product family, the LM49150
consumes very low power in the various modes of operation
and still providing great audio performance. The LM49150
combines a 1.25W mono E2S (Enhanced Emission Suppres-
sion) class D amplifier, 135mW Class AB earpiece amplifier,
42mW/channel stereo ground reference headphone ampli-
fiers, volume control, and mixing circuitry into a single device.
The filterless class D amplifier delivers 1.25W into an 8Ω load
with <1% THD+N with a 5V supply. The E2S class D amplifier
features a patented, ultra low EMI PWM architecture that sig-
nificantly reduces RF emissions while preserving audio qual-
ity. The 42mW/channel headphone drivers feature National’s
ground referenced architecture that creates a ground-refer-
enced output from a single supply, eliminating the need for
bulky and expensive DC-blocking capacitors, saving space
and minimizing cost.
The LM49150 features a fully differential mono input, and two
single-ended stereo inputs. The three inputs can be mixed/
multiplexed to either the speaker or headphone amplifiers.
Each input channel has an independent, 32-step digital vol-
ume control. The headphone output stage features an addi-
tional, 8-step gain control, while the speaker output stage has
a selectable 6dB or 12dB gain. The mixer, volume control and
device mode select are controlled through an I2C compatible
serial interface.
The LM49150’s superior click and pop suppression elimi-
nates audible transients on power-up/down and during shut-
down. The LM49150 is available in a ultra-small 20-bump
micro SMD package (2.225mm X 2.644mm).
Key Specifications
■ Output power at VDD = 5V:
Speaker:
RL = 8Ω BTL, THD+N ≤ 1%
Headphone:
RL = 32Ω SE, THD+N ≤ 1%
Earpiece:
RL = 8Ω SE, THD+N ≤ 1%
■ Output power at VDD = 3.3V:
Speaker:
RL = 8Ω BTL, THD+N ≤ 1%
Headphone:
RL = 32Ω BTL, THD+N ≤ 1%
Earpiece:
RL = 8Ω SE, THD+N ≤ 1%
■ Output Offset
LS Mode
HP Mode
Earpiece
■ Single Supply Operation (VDD)
■ I2C Single Supply Operation
1.25W (typ)
42mW (typ)
135mW (typ)
520mW (typ)
42mW (typ)
35mW (typ)
9mV (typ)
1mV (typ)
1mV (typ)
2.7 to 5.5V
1.7 to 5.5V
Features
■ E2S class D amplifier
■ Ground referenced headphone outputs — eliminates
output coupling capacitors
■ I2C volume and mode control
■ Mono earpiece amplifier
■ Flexible output for speaker and headphone output
■ 20–bump micro SMD package
■ Soft enable function
■ “Click and Pop” suppression circuitry
■ Thermal shutdown protection
■ Low supply current
■ Micro-power shutdown
Applications
■ Mobile Phones
■ PDAs
■ Portable Electronics
Boomer® is a registered trademark of National Semiconductor Corporation.
© 2009 National Semiconductor Corporation 300446
www.DataSheet.in
www.national.com
1 page Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (Note 1)
Storage Temperature
Input Voltage
Power Dissipation (Note 3)
ESD Rating (Note 4)
ESD Rating (Note 5)
Junction Temperature
6.0V
−65°C to +150°C
−0.3 to VDD +0.3
Internally Limited
2.0kV
200V
150°C
Soldering Information
Thermal Resistance
θJA (typ) - TLA20KGA
Operating Ratings
Temperature Range
Supply Voltage
Supply Voltage (I2C) (Note 10)
See AN-1112
“Micro SMD Wafer
Level Chip Scale
Package”
46.1°C/W
−40°C to 85°C
2.7V ≤ VDD ≤ 5.5V
1.7V ≤ I2CVDD ≤ 5.5V
Electrical Characteristics 3.3V (Note 2)
The following specifications apply for VDD = LSVDD = 3.3V, AV = 0dB, Loudspeaker RL = 15μH+8Ω+15μH (Note 8), Earpiece RL
= 8Ω, f = 1kHz, unless otherwise specified. Limits apply for TA = 25C. LS = Loudspeaker, HP = Headphone, EP = Earpiece.
Symbol
Parameter
Conditions
LM49150
Typical Limits
(Note 6) (Note 7)
Units
(Limits)
VIN = 0, No Load
LS mode 1
3.7 5 mA (max)
HP mode 8
4.7 6.7 mA (max)
IDD Supply Current
EP Bypass mode
LS + HP mode 5 and mode 10
0.8 1.2 mA (max)
7 9.5 mA (max)
LS mode 1, GAMP_SD = 1
3 4 mA (max)
HP mode 8, GAMP_SD = 1
4.3 6.1 mA (max)
ISD Shutdown Current
VIN = 0V, LS, RL = 8Ω
LS Gain = 6dB, Stereo mode 10
0.04 1 µA (max)
9 40 mV (max)
VOS Output Offset Voltage
VIN = 0V, HP, RL = 32Ω
Ground Referenced, Stereo mode 10
1 5 mV (max)
VIN = 0V, EP Bypass only, RL = 8Ω
0.8 5 mV (max)
LS mode 1, THD+N = 1%, f = 1kHz
LS Gain = 6dB, RL = 4Ω
845
mW
LS mode 1, THD+N = 1%, f = 1kHz
LS Gain = 6dB, RL = 8Ω
520 450 mW (min)
PO Output Power
HP mode 8, THD+N = 1%, f = 1kHz
HP Attenuation = 0dB, RL = 16Ω
42
mW
HP mode 8, THD+N = 1%, f = 1kHz
HP Attenuation = 0dB, RL = 32Ω
43 39 mW (min)
EP Bypass only, THD+N = 1%, f = 1kHz
RL = 8Ω
35
28 mW (min)
LS mode 1, f = 1kHz
POUT = 250mW; RL = 8Ω
0.02
%
THD+N
HP mode 8, f = 1kHz
Total Harmonic Distortion + Noise
POUT = 20mW; RL = 32Ω
0.009
%
EP Bypass only, f = 1kHz
POUT = 20mW; RL = 8Ω
0.15
%
η Efficiency
LS output
88 %
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5 Page THD+N vs Frequency
VDD = 3.3V, RL = 8Ω, POUT = 20mW
Earpiece Bypass Mode
THD+N vs Frequency
VDD = 3.6V, RL = 8Ω, POUT = 30mW
Earpiece Bypass Mode
300446o4
THD+N vs Frequency
VDD = 5V, RL = 8Ω, POUT = 60mW
Earpiece Bypass Mode
THD+N vs Output Power
RL = 8Ω, f = 1kHz
Speaker Mode 1
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300446o6
THD+N vs Output Power
VDD = 3.3V, RL = 32Ω, f = 1kHz
Headphone Mode 8
300446p7
THD+N vs Output Power
VDD = 3.6V, RL = 32Ω, f = 1kHz
Headphone Mode 8
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11 Page |
Páginas | Total 28 Páginas | |
PDF Descargar | [ Datasheet LM49150.PDF ] |
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