|
|
|
부품번호 | BTA312Y 기능 |
|
|
기능 | 12A Three-quadrant triacs high commutation insulated | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
BTA312Y series C
12 A Three-quadrant triacs high commutation insulated
Rev. 01 — 27 September 2007
Product data sheet
1. Product profile
1.1 General description
Passivated, new generation, high commutation triacs in an internally insulated TO-220
plastic package
1.2 Features
I Very high commutation performance
I Isolated mounting base
I High immunity to dV/dt
I 2500 V RMS isolation voltage
1.3 Applications
I Motor control - e.g. washing machines I Non-linear rectifier-fed motor loads
I Refrigeration compressors
I Lamp dimmers for US market
1.4 Quick reference data
I VDRM ≤ 600 V (BTA312Y-600C)
I VDRM ≤ 800 V (BTA312Y-800C)
I IGT ≤ 35 mA
I IT(RMS) ≤ 12 A
I ITSM ≤ 100 A (t = 20 ms)
I ITSM ≤ 110 A (t = 16.7 ms)
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base; isolated
Simplified outline
mb
Symbol
T2
sym051
T1
G
123
SOT78D (TO-220)
www.DataSheet.in
NXP Semiconductors
BTA312Y series C
12 A Three-quadrant triacs high commutation insulated
103
ITSM
(A)
(1)
003aab806
102
IT ITSM
t
tp
Tj(init) = 25 °C max
10
10-5
10-4
10-3
10-2
10-1
tp (s)
tp ≤ 20 ms
(1) dIT/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
30
IT(RMS)
(A)
003aab807
15
IT(RMS)
(A)
003aab805
20 10
10 5
0
10-2
10-1
1 10
surge duration (s)
f = 50 Hz
Tmb = 85 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
0
-50 0 50 100 150
Tmb (°C)
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
BTA312Y_SER_C_1
Product data sheet
www.DataSheet.in
Rev. 01 — 27 September 2007
© NXP B.V. 2007. All rights reserved.
4 of 12
4페이지 NXP Semiconductors
BTA312Y series C
12 A Three-quadrant triacs high commutation insulated
8. Dynamic characteristics
Table 7. Dynamic characteristics
Symbol Parameter
Conditions
dVD/dt rate of rise of
VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform;
off-state voltage gate open circuit
dIcom/dt rate of change of VDM = 400 V; Tj = 125 °C; IT(RMS) = 12 A; without snubber;
commutating
gate open circuit
current
tgt gate-controlled ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs
turn-on time
Min Typ Max Unit
500 -
- V/µs
20 -
- A/ms
- 2 - µs
1.6
VGT
VGT(25°C)
1.2
0.8
001aab101
3
IGT
IGT(25°C)
(1)
2
(2)
(3)
1
001aac669
0.4
−50
0
50 100 150
Tj (°C)
0
−50
0
50 100 150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function of
junction temperature
BTA312Y_SER_C_1
Product data sheet
www.DataSheet.in
Rev. 01 — 27 September 2007
© NXP B.V. 2007. All rights reserved.
7 of 12
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ BTA312Y.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BTA312 | 12A 3-Quadrant Triacs High Commutation | NXP Semiconductors |
BTA312-600D | 3Q Hi-Com Triac | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |