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PDF RJE0607JSP Data sheet ( Hoja de datos )
| Número de pieza | RJE0607JSP | |
| Descripción | Silicon P Channel MOS FET Series Power Switching | |
| Fabricantes | Renesas Technology | |
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RJE0607JSP
Silicon P Channel MOS FET Series
Power Switching
Preliminary Datasheet
REJ03G1876-0100
Rev.1.00
Apr 01, 2010
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
High endurance capability against to the short circuit.
Built-in the over temperature shut-down circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Low on-resistance RDS(on) : 140 m Typ, 260 m Max (VGS = –10 V)
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 (FP-8DAV))
8 7 65
DD
78
1 234
2
G Gate Resistor
Current
Limitation
Circuit
4
G Gate Resistor
Current
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
1
MOS1
S
MOS2
DD
56
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
3
S
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
–60
Gate to source voltage
VGSS
–16
Gate to source voltage
Drain current
VGSS
ID Note5
2.5
–1.5
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
IDR
IAP Note 4
EAR Note 4
Pch Note 2
Pch Note 3
–1.5
–1.5
9.6
2
1.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. Value at Tc = 25C
2. 1 Drive operation : When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
4. Tch = 25C, Rg 50
5. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
C
C
REJ03G1876-0100 Rev.1.00
Apr 01, 2010
www.DataSheet.in
Page 1 of 7
1 page  
RJE0607JSP
Preliminary
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120 ID = −0.2 A
dv/dt
VGS ≥ 500 V/ms
100
0 −2 −4 −6 −8 −10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
0.1
0.01
0.001
D=1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
0.0001
10 μ
100 μ
1m
θch-f(t) = γs (t) • θch - f
θch-f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width
(Operatioon of 2 devices; allowable value per device)
10
D=1
1 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
1shot pulse
0.0001
10 μ
100 μ
1m
θch-f(t) = γs (t) • θch - f
θch-f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
REJ03G1876-0100 Rev.1.00
Apr 01, 2010
www.DataSheet.in
Page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RJE0607JSP.PDF ] | |
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