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PDF 4AM17 Data sheet ( Hoja de datos )
| Número de pieza | 4AM17 | |
| Descripción | Silicon N/P-Channel/P-Channel Power MOS FET Array | |
| Fabricantes | Hitachi Semiconductor | |
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4AM17
Silicon N/P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
N Channel: RDS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A
P Channel : RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A
• 4 V gate drive devices.
• High density mounting
Outline
SP-12
ADE-208-729 (Z)
1st. Edition
February 1999
1
G
2
D5
G
4
D8
G
9
D 12
G
11
D
1 2 3 4 5 6 7 8 9101112
S 3 S 6 S 7 S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
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1 page  
Main Characteristics
4AM17
Maximum Channel Dissipation Curve
6
Condition : Channel dissipation of
each die is is idetical
5
4 Device Operation
4 3 Device Operation
2 Device Operation
3 1 Device Operation
2
1
Maximum Channel Dissipation Curve
60
Condition : Channel dissipation of
each die is is idetical
4 Device Operation
3 Device Operation
20 2 Device Operation
1 Device Operation
10
0 25 50 75 100 125 150
Ambient Temperature Tc (°C)
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Maximum Safe Operation Area
(N–channel)
50
20
10
5
2
1
Operation in
PW
=
10
11m0s01µ0sµs
ms (1shot)
this area is
0.5 limited by RDS(on)
0.2
0.1 Ta = 25 °C
0.05
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
–50
–20
–10
–5
–2
–1
–0.5
–0.2
Maximum Safe Operation Area
(P–channel)
PW 1001µ0sµs
Operation in
= 10 ms (1shot)
this area is
limited by RDS(on)
–0.1
–0.05
Ta = 25 °C
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V DS (V)
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5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 4AM17.PDF ] | |
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