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부품번호 | WTPB16A60SW 기능 |
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기능 | Sensitive Gate Bi-Directional Triode Thyristor | ||
제조업체 | WINSEMI SEMICONDUCTOR | ||
로고 | |||
www.DataSheet.in
WTPB16A60SW
Sensitive Gate
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(IT(RMS)=16A
■ Low on-state voltage: VTM=1.55V(Max.)@ IT=22.5A
■ High Commutation dV/dt.
General Description
General purpose swiTJhing and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
Parameter
Value Units
VDRM/VPRM
IT(RMS)
ITSM
I2t
Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)
Forward Current RMS (All Conduction Angles, TJ=58℃)
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (tp= 10 ms)
600
16
160/168
144
V
A
A
A2s
PGM Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)
5W
PG(AV)
dI/dt
IFGM
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
ITM = 20A; IG = 200mA; dIG/dt = 200mA/µs
TJ=125℃
Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS)
1W
50 A/μs
4A
VRGM
Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS)
10 V
TJ, Junction Temperature
-40~125
℃
Tstg Storage Temperature
-40~150
℃
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 1.6
- - 60
Units
℃/W
℃/W
Rev. B Nov.2008
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
T01-3
www.DataSheet.in
WTPB16A60SW
8
Fig.7
Fig.8
Fig.9
Fig.10 Gate Trigger Characteristics Test Circuit
4/5
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
WTPB16A60SW | Sensitive Gate Bi-Directional Triode Thyristor | WINSEMI SEMICONDUCTOR |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |