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Número de pieza | WFY4101 | |
Descripción | Trench Power MOSFET | |
Fabricantes | WINSEMI SEMICONDUCTOR | |
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WFY4101
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
■ -3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V
■ −1.8 V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advanced
MOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
Load/Power Management for Portables and Computing,
Charging Circuits and Battery Protection
D
G
S
SOT-23
Absolute Maximum Ratings
Symbol
VDSS
ID
PD
ID
PD
IDM
VGS
ESD
TJ, Tstg
TL
Parameter
Drain Source Voltage
Continuous Drain Current(Note 1)
Total Power Dissipation(Note 1)
Continuous Drain Current(Note 2)
Total Power Dissipation(Note 2)
Drain Current Pulsed
Steady State
t≤10s
Steady State
t≤10s
Steady State
t=10s
Tc=25℃
Tc=85℃
Tc=25℃
Tc=25℃
Tc=25℃
Tc=85℃
Tc=25℃
Gate to Source Voltage
ESD Capability (Note 3)
C=100pF,RS = 1500Ω
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
Value
-20
−2.4
-1.7
-3.2
0.73
1.25
-1.8
-1.3
0.42
-7.5
±8
225
-55~150
260
Units
V
A
W
A
W
A
V
V
℃
℃
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Symbol
Parameter
RQJA
RQJA
RQJA
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
Value
Min Typ Max
- - 170
110
300
Units
℃/W
℃/W
℃/W
Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.
Note 3: ESD Rating Information: HBM Class 0
Rev. A Mar.2010
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
P02-1
1 page www.DataSheet.in
SOT-23 Package Dimension
WFY4101
Steady, all for your advance
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet WFY4101.PDF ] |
Número de pieza | Descripción | Fabricantes |
WFY4101 | Trench Power MOSFET | WINSEMI SEMICONDUCTOR |
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