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PDF WFW18N50 Data sheet ( Hoja de datos )
| Número de pieza | WFW18N50 | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | WINSEMI SEMICONDUCTOR | |
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Features
18A,500V,RDS(on)(Max0.265Ω)@VGS=10V
Ultra-low Gate charge(Typical 42nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
WFW18N50
Silicon N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Winsemi’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
PD Total Power Dissipation(@Tc=25℃)
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
18
12.7
80
±30
330
27.7
4.5
280
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
- - 0.45
- 0.24 -
- - 40
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
Units
℃/W
℃/W
℃/W
www.DataSheet.in
1 page  
WFW18N50
Fig.12 Gate Test Circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
5/7
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Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
Steady, all for your advance
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WFW18N50.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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