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Datasheet CY62136V Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | CY62136V | 2-Mbit (128K x 16) Static RAM CY62136V MoBL®
2-Mbit (128K x 16) Static RAM
Features
• Temperature Ranges — Commercial : 0°C to 70°C — Industrial : −40°C to 85°C — Automotive : −40°C to 125°C • High speed: 55 ns and 70 ns • 70-ns speed bin offered in both Industrial and Automotive grades • Wide voltage r | Cypress Semiconductor | data |
2 | CY62136VN | 2-Mbit (128K x 16) Static RAM CY62136VN MoBL®
2-Mbit (128K x 16) Static RAM
Features
• Temperature Ranges — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C — Automotive-E: –40°C to 125°C • High speed: 55 ns • Wide voltage range: 2.7V–3.6V • Ultra-low active, standby power • Easy memory exp | Cypress Semiconductor | data |
CY6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | CY6116A | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
2 | CY6116A-20PC | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
3 | CY6116A-25DMB | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
4 | CY6116A-25LMB | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
5 | CY6116A-25PC | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
6 | CY6116A-35DMB | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
7 | CY6116A-35LMB | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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