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PDF STD3NK100Z Data sheet ( Hoja de datos )
| Número de pieza | STD3NK100Z | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF3NK100Z - STD3NK100Z
STP3NK100Z
N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK
Zener-protected SuperMESH™ Power MOSFET
Features
Type
STF3NK100Z
STP3NK100Z
STD3NK100Z
VDSS
1000V
1000V
1000V
RDS(on)
Max
< 6Ω
< 6Ω
< 6Ω
ID PTOT
2.5A
2.5A
2.5A
25W
90W
90W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down,
specialties is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage Power MOSFETs.
3
2
1
TO-220
3
2
1
TO-220FP
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STF3NK100Z
STP3NK100Z
STD3NK100Z
Marking
F3NK100Z
P3NK100Z
D3NK100Z
Package
TO-220FP
TO-220
DPAK
Packaging
Tube
Tube
Tape & reel
October 2007
www.DataSheet.in
Rev 2
1/16
www.st.com
16
1 page  
STF3NK100Z - STP3NK100Z - STD3NK100Z
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tr
Turn-off delay time
Fall time
Test conditions
VDD= 500V, ID= 1.25A,
RG=4.7Ω, VGS=10V
(see Figure 16)
VDD= 500V, ID= 1.25A,
RG=4.7Ω, VGS=10V
(see Figure 16)
Min. Typ. Max. Unit
15 ns
7.5 ns
39 ns
32 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD= 2.5A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5A, di/dt = 100A/µs,
VDD= 100V, Tj= 25°C
(see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5A, di/dt = 100A/µs,
VDD= 100V, Tj=150°C
(see Figure 21)
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
2.5 A
10 A
1.6 V
584 ns
2.3 µC
8A
628 ns
2.5 µC
8.1 A
Table 9. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO Gate-source breakdown
(1) voltage
IGS = ±1mA (open drain)
30
V
1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the
usage of external components.
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5/16
5 Page 
STF3NK100Z - STP3NK100Z - STD3NK100Z
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.49
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85
0.147
0.151
Q 2.65
2.95
0.104
0.116
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