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PDF STD9NM50N Data sheet ( Hoja de datos )
| Número de pieza | STD9NM50N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD9NM50N - STD9NM50N-1
STF9NM50N - STP9NM50N
N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK
Second generation MDmesh™ Power MOSFET
Features
Type
STD9NM50N
STD9NM50N-1
VDSS
(@Tjmax)
550V
550V
RDS(on)
<0.56Ω
<0.56Ω
ID
7.5A
7.5A
3
2
1
3
2
1
IPAK
STP9NM50N
550V
<0.56Ω 7.5A
TO-220
STF9NM50N
550V
<0.56Ω 7.5A(1)
)1. Limited only by maximum temperature allowed
t(s■ 100% avalanche tested
c■ Low input capacitance and gate charge
du■ Low gate input resistance
ProDescription
teThis series of devices implements second
legeneration MDmesh™ technology. This
sorevolutionary Power MOSFET associates a new
bvertical structure to the Company’s strip layout to
Oyield one of the world’s lowest on-resistance and
-gate charge. It is therefore suitable for the most
)demanding high efficiency converters.
ct(sApplications
du■ Switching application
3
1
DPAK
3
2
1
TO-220FP
Internal schematic diagram
te ProOrder codes
olePart number
ObsSTD9NM50N-1
Marking
D9NM50N
Package
IPAK
Packaging
Tube
STD9NM50N
D9NM50N
DPAK
Tape & reel
STP9NM50N
P9NM50N
TO-220
Tube
STF9NM50N
F9NM50N
TO-220FP
Tube
10 April 2007
www.DataSheet.in
Rev 1
1/17
www.st.com
17
1 page  
STD9NM50N - STD9NM50N-1 - STP9NM50N - STF9NM50N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=250V, ID=3.7A,
RG=4.7Ω, VGS=10V
(see Figure 15)
Min Typ Max Unit
11 ns
16 ns
45 ns
19 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM(1)
Source-drain current
Source-drain current (pulsed)
7.5 A
30 A
VSD(2) Forward on voltage
ISD=7.5A, VGS=0
)trr
t(sQrr
cIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=7.5A, di/dt=100A/µs,
VDD=100V, Tj=150°C
(see Figure 17)
dutrr
roQrr
PIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=7.5A, di/dt=100A/µs,
VDD=100V, Tj= 25°C
(see Figure 17)
te1. Pulse width limited by safe operating area
Obsolete Product(s) - Obsole2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
1.2
420
3
14
280
2
14
V
ns
µC
A
ns
µC
A
www.DataSheet.in
5/17
5 Page 
STD9NM50N - STD9NM50N-1 - STP9NM50N - STF9NM50N
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
MIN.
mm.
TYP
MAX.
MIN.
inch
TYP.
MAX.
A 4.40
4.60 0.173
0.181
b 0.61
0.88 0.024
0.034
b1 1.15
1.70 0.045
0.066
c 0.49
0.70 0.019
0.027
D 15.25
15.75
0.60
0.620
E 10
10.40
0.393
0.409
e 2.40
2.70 0.094
0.106
e1 4.95
5.15 0.194
0.202
F 1.23
1.32 0.048
0.052
H1 6.20
6.60 0.244
0.256
)J1 2.40
2.72 0.094
0.107
t(sL 13
14 0.511
0.551
L1 3.50
3.93 0.137
0.154
cL20 16.40
0.645
uL30 28.90
1.137
døP 3.75
3.85 0.147
0.151
Obsolete Product(s) - Obsolete ProQ 2.65
2.95 0.104
0.116
www.DataSheet.in
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| PDF Descargar | [ Datasheet STD9NM50N.PDF ] | |
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