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Número de pieza | STD95N2LH5 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STD95N2LH5
STP95N2LH5, STU95N2LH5
N-channel 25 V, 0.0038 Ω, 80 A, DPAK, IPAK, TO-220
STripFET™ V Power MOSFET
Features
Type
STD95N2LH5
STP95N2LH5
STU95N2LH5
VDSS
25 V
25 V
25 V
RDS(on) max
< 0.0045 Ω
< 0.0049 Ω
< 0.0049 Ω
ID
80 A
80 A
80 A
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM (figure of merit).
3
1
DPAK
IPAK
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!" OR
'
Table 1. Device summary
Order codes
STD95N2LH5
STP95N2LH5
STU95N2LH5
Marking
95N2LH5
95N2LH5
95N2LH5
3
!-V
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
April 2010
Doc ID 13834 Rev 5
1/17
www.st.com
17
www.DataSheet.in
1 page STD95N2LH5, STP95N2LH5, STU95N2LH5
Electrical characteristics
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
VDD=12.5 V, ID= 40 A,
RG= 4.7 Ω, VGS= 10 V
Figure 17
VDD=12.5 V, ID= 40 A,
RG= 4.7 Ω, VGS= 10 V
Figure 17
Min. Typ. Max. Unit
7
-
38
ns
-
ns
22
-
7
ns
-
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD= 35 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A, VDD= 20 V
di/dt =100 A/µs,
Figure 19
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
-
320 A
- 1.1 V
32.4
- 27.1
1.7
ns
nC
A
www.DataSheet.in
Doc ID 13834 Rev 5
5/17
5 Page STD95N2LH5, STP95N2LH5, STU95N2LH5
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
www.DataSheet.in
Doc ID 13834 Rev 5
11/17
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet STD95N2LH5.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD95N2LH5 | N-channel Power MOSFET | STMicroelectronics |
STD95N2LH5 | N-channel Power MOSFET | STMicroelectronics |
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