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PDF FGH80N60FD Data sheet ( Hoja de datos )
| Número de pieza | FGH80N60FD | |
| Descripción | 80A Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGH80N60FD
600 V Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
• High Input Impedance
• Fast Switching
• RoHS Complaint
Applications
• Induction Heating, PFC, Telecom, ESS
E
C
G
November 2013
General Description
Using novel field stop IGBT technology, Fairchild's field stop
IGBTs offer the optimum performance for induction heating,
telecom, ESS and PFC applications where low conduction and
switching losses are essential.
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
@ TC = 25C
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
Ratings
600
20
80
40
160
290
116
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.43
1.5
40
Unit
V
V
A
A
A
W
W
C
C
C
Unit
C/W
C/W
C/W
©2007 Fairchild Semiconductor Corporation
FGH80N60FD Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. Vge
20
Common Emitter
TC = 125oC
16
Figure 8. Capacitance Characteristics
5000
4000
Common Emitter
VGE = 0V, f = 1MHz
Ciss TC = 25oC
12
8
40A
4 80A
IC = 20A
0
4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Gate Charge Characteristics
15
Common Emitter
TC = 25oC
12
Vcc = 100V
9
200V
300V
6
3
0
0 50 100
Gate Charge, Qg [nC]
Figure 11. Turn-Off Switching SOA
Characteristics
200
100
150
3000
2000
Coss
1000
Crss
0
0.1 1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteeristics
400
100 10s
100s
10
1ms
1
0.1
0.01
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
10 ms
DC
10 100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-On Characteristics vs.
Gate Resistance
200
100
10
Safe Operating Area
1 VGE = 20V, TC = 100oC
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
tr
10
5
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG []
50
©2007 Fairchild Semiconductor Corporation
FGH80N60FD Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGH80N60FD.PDF ] | |
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