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BD9893F 데이터시트 PDF




ROHM Semiconductor에서 제조한 전자 부품 BD9893F은 전자 산업 및 응용 분야에서
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부품번호 BD9893F 기능
기능 DC-AC Inverter Control IC
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BD9893F 데이터시트, 핀배열, 회로
1/4
STRUCTURE
NAME OF PRODUCT
TYPE
Silicon Monolithic Integrated Circuit
DC-AC Inverter Control IC
BD9893F
FUNCTION
1.1ch control with Push-Pull
2.Lamp current and voltage sense feed back control
3.Sequencing easily achieved with Soft Start Control
4.Short circuit protection with Timer Latch
5.Under Voltage Lock Out
6.Short circuit protection with over voltage
7.Mode-selectable the operating or stand-by mode by stand-by pin
8.BURST mode controlled by PWM and DC input
○Absolute Maximum Ratings(Ta = 25℃)
Parameter
Supply Voltage
Operating Temperature Range
Storage Temperature Range
Power Dissipation
Maximum Junction Temperature
Symbol
VCC
Topr
Tstg
Pd
Tjmax
Limits
15
-35~+95
-55~+125
562*
+150
Unit
V
mW
*Pd derated at 4.5mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm)
〇Recommended operating condition
Parameter
Supply voltage
Drive output frequency
BCT oscillation frequency
Symbol
Vcc
fOUT
fBCT
Limits
4.5~14.0
20~150
0.10~0.50
Unit
V
KHz
KHz
Status of this document
The Japanese version of this document is the official specification.
Please use the translation version of this document as a reference to expedite understanding of the official version.
If these are any uncertainty in translation version of this document, official version takes priority.
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BD9893F pdf, 반도체, 판매, 대치품
4/4
NOTE FOR USE
1. When designing the external circuit, including adequate margins for variation between external devices and the IC.Use
adequate margins for steady state and transient characteristics.
2. Recommended Operating Range
The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended
operating range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating
ranges, however the variation will be small.
3. Mounting failures, such as misdirection or miscounts, may harm the device.
4. A strong electromagnetic field may cause the IC to malfunction.
5. The GND pin should be the location within ±0.3V compared with the PGND pin
6. The BD9893F incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit)
is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee
its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation
of the thermal shutdown circuit is assumed.
7. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly shortened.
Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such as a fuse, need
to be considered when using a device beyond its maximum ratings.
8. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching.
Make sure to leave adequate margin for this IC variation.
9. On operating Slow Start Control (SS is less than 2.2V), It does not operate Timer Latch.
10. By STB voltage, BD9893F are changed to 3 states. Therefore, do not input STB pin voltage between one state and the other
state (0.8~1.4V, 2.1~2.3V).
11.The pin connected a connector need to connect to the resistor for electrical surge destruction.
12.This IC is a monolithic IC which (as shown is Fig-1)has P+ substrate and between the various pins. A P-N junction is
formed from this P layer of each pin. For example, the relation between each potential is as follows,
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which
parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin.
(PinA)
Resistance
P
P
N
P
P substrate
GND
Parasitic diode
Transistor (NPN)
(PinB)
B
C
E
N
GND
N
P substrate
GND
Parasitic diode
N
(PinB)
(PinA)
Parasitic diode
B C
E
GND
GND
Other adjacent components Parasitic diode
Fig-1 Simplified structure of a Bipolar IC
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관련 데이터시트

부품번호상세설명 및 기능제조사
BD9893F

DC-AC Inverter Control IC

ROHM Semiconductor
ROHM Semiconductor

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