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부품번호 | FU9N20D 기능 |
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기능 | IRFU9N20D | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 10 페이지수
PD - 93919A
SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
IRFR9N20D
IRFU9N20D
HEXFET® Power MOSFET
RDS(on) max
0.38Ω
ID
9.4A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR9N20D
I-Pak
IRFU9N20D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes through are on page 10
www.irf.com
Max.
9.4
6.7
38
86
0.57
± 30
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
1
6/29/00
www.DataSheet.in
IRFR9N20D/IRFU9N20D
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
100 Coss
10
1
Crss
10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 5.6A
16
12
VDS = 160V
VDS = 100V
VDS = 40V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 5 10 15 20 25 30
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 175° C
1
TJ = 25 ° C
0.1
0.2
VGS = 0 V
0.4 0.6 0.8 1.0 1.2
VSD ,Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100us
1ms
1
10ms
TC = 25 °C
TJ = 175°C
Single Pulse
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.irf.com
www.DataSheet.in
4페이지 IRFR9N20D/IRFU9N20D
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
VDD
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
www.DataSheet.in
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FU9N20D | IRFU9N20D | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |