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PDF SVC363 Data sheet ( Hoja de datos )
| Número de pieza | SVC363 | |
| Descripción | Varactor Diode | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number :EN3048B
SVC363
Diffused Junction Type Sillicon Diode
Composite Varactor Diode for AM Receiver
Low-Voltage Electronic Tuning Use
Features
· Excellent matching characteristics because of
composite type.
· The number of manufacturing processes can be
reduced and automatic mounting is possible because
of composite type.
· High capacitance ratio and high quality factor.
· Possible to offer the SVC363 devices in a tape reel
packaging.
· Surface mount type.
Package Dimensions
unit:mm
1214B
[SVC363]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature
Symbol
VR
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Breakdown Voltage
Reverse Current (One diode)
Interterminal Capacitance (Average)
Quality Factor
Capacitance Ratio
Matching Tolerance
V(BR)R
IR
C1V
C6V
C8V
Q
CR
∆Cm*2
IR=10µA
VR=9V
VR=1V, f=1MHz*1
VR=6V, f=1MHz
VR=8V, f=1MHz
VR=1V, f=1MHz
C1V/C8V, f=1MHz
VR=1V to 8V, f=1MHz
Note)*1:1MHz signal:20mVrms.
Note)*2:∆Cm= (CDn–CD3) / CD3×100
Note)*:The SVC363 is classified by C1V as follows:
Electrical Connection
Rank
K
L
M
C1V(pF)
428.0 to 456.5
447.5 to 478.0
468.5 to 500.0
SANYO:MFP6
Ratings
16
125
–55 to +125
Unit
V
˚C
˚C
Ratings
min typ
16
428.0*
20.5
200
17.5
52.0
max
100
500.0*
27.0
24.5
±2.5
Unit
V
nA
pF
pF
pF
%
A:Anode
C:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/62096GI (KOTO)/2230MO/2179MO, TS No.3048-1/3
www.DataSheet.in
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| PDF Descargar | [ Datasheet SVC363.PDF ] | |
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