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PDF KTX302U Data sheet ( Hoja de datos )
| Número de pieza | KTX302U | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE/ LOW VOLTAGE HIGH SPEED SWITCHING) | |
| Fabricantes | KEC(Korea Electronics) | |
| Logotipo | .gif "KEC(Korea Electronics)"){kind=logo} |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
54
Marking
5
Type Name
4
D1 Q1
CF
12
MARK SPEC
Type
Mark
3
KTX302U
Q1 hFE Rank : Y
CF
12 3
KTX302U
Q1 hFE Rank : GR
CH
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DIODE (SBD) D1
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Junction Temperature
Storage Temperature Range
2003. 3. 11
Revision No : 1
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
SYMBOL
VRM
VR
IFM
IO
IFSM
Tj
Tstg
KTX302U
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
B
B1
1 5 DIM MILLIMETERS
A 2.00+_ 0.20
2 A1 1.3+_ 0.1
B 2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H 0.9+_ 0.1
T T 0.15+0.1/-0.05
G
1. D 1 ANODE
2. Q 1 BASE
3. Q 1 EMITTER
4. Q 1 COLLECTOR
5. D1 CATHODE
USV
RATING
-50
-50
-5
-150
-30
100
150
-55~125
RATING
30
30
300
200
1
125
-55 125
UNIT
V
V
UNIT
V
V
A
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KTX302U.PDF ] | |
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| KTX302U | EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE/ LOW VOLTAGE HIGH SPEED SWITCHING) | KEC(Korea Electronics) |
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