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PDF K3N7V4000B Data sheet ( Hoja de datos )
| Número de pieza | K3N7V4000B | |
| Descripción | 64M-Bit (4M X 16) CMOS Mask ROM | |
| Fabricantes | Samsung Semiconductor | |
| Logotipo |  |
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K3N7V(U)4000B-DC
64M-Bit (4Mx16) CMOS MASK ROM
FEATURES
• Switchable organization
4,194,304 x 16(word mode)
• Fast access time
3.3V Operation : 100ns(Max.)@CL=50pF,
120ns(Max.)@CL=100pF
3.0V Operation : 120ns(Max.)@CL=100pF
• Supply voltage : single +3.3V/ single +3.0V
• Current consumption
Operating : 40mA(Max.)
• Fully static operation
• All inputs and outputs TTL compatible
• Three state outputs
• Package
-. K3N7V(U)4000B-DC: 42-DIP-600
CMOS MASK ROM
www.DataSheet4U.com
GENERAL DESCRIPTION
The K3N7V(U)4000B-DC is a fully static mask programmable
ROM organized 4,194,304x16 bit. It is fabricated using silicon-
gate CMOS process technology.
This device operates with 3.0V or 3.3V power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The K3N7V(U)4000B-DC is packaged in a 42-DIP
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
A21
.
.
.
.
.
.
.
.
A0
X
BUFFERS
AND
DECODER
Y
BUFFERS
AND
DECODER
OE CONTROL
LOGIC
MEMORY CELL
MATRIX
(4,194,304x16)
SENSE AMP.
BUFFERS
...
Q0 Q15
Pin Name
A0 - A21
Q0 - Q15
OE
VCC
VSS
Pin Function
Address Inputs
Data Outputs
Output Enable
Power
Ground
A18 1
A17 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
A21 11
VSS 12
OE 13
Q0 14
Q8 15
Q1 16
Q9 17
Q2 18
Q10 19
Q3 20
Q11 21
DIP
42 A19
41 A8
40 A9
39 A10
38 A11
37 A12
36 A13
35 A14
34 A15
33 A16
32 A20
31 VSS
30 Q15
29 Q7
28 Q14
27 Q6
26 Q13
25 Q5
24 Q12
23 Q4
22 VCC
K3N7V(U)4000B-DC
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet K3N7V4000B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K3N7V4000B | 64M-Bit (4M X 16) CMOS Mask ROM | Samsung Semiconductor |
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