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부품번호 | EM610FV8 기능 |
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기능 | 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM | ||
제조업체 | Emerging Memory & Logic Solutions | ||
로고 | |||
merging Memory & Logic Solutions Inc.
Document Title
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
0.1 2’nd Draft Add Pb-free part number
EM610FV8 Series
Low Power, 128Kx8 SRAM
www.DataSheet4U.com
Draft Date
December 2 , 2003
February 13 , 2004
Remark
Emerging Memory & Logic Solutions Inc.
IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160
Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
merging Memory & Logic Solutions Inc.
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
VCC
VSS
VIH
VIL
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
Min
2.7
0
2.2
-0.2 3 )
EM610FV8 Series
Low Power, 128Kx8 SRAM
www.DataSheet4U.com
Typ Max Unit
3.3 3.6 V
0 0V
-
VCC + 0.22)
V
- 0.6 V
CAPACITANCE1) (f =1MHz, TA=25oC)
Item
Input capacitance
Input/Ouput capacitance
Symbol
CIN
CIO
Test Condition
Min
Max
Unit
VIN =0V
- 8 pF
VIO=0V
- 10 pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Operating power supply
Average operating current
Output low voltage
Output high voltage
Standby Current (TTL)
Standby Current (CMOS)
Symbol
Test Conditions
ILI V IN=V SS to VCC
ILO CS1= VIH , CS2=VIL or OE=V IH or WE=VIL, VIO= VSS to VCC
ICC I IO=0mA, CS 1=V IL, CS 2=WE = VIH , VI N=VI H or VIL
ICC1
ICC2
Cycle time=1µs, 100% duty, I IO=0mA,
CS1< 0.2V, CS2>VCC -0.2V,
V IN< 0.2V or VIN >VCC-0.2V
Cycle time = Min, IIO=0mA, 100% duty,
CS1=V IL, CS2=V IH, VIN=V IL or VI H
55ns
70ns
VOL
VO H
IOL = 2.1mA
IOH = -1.0mA
ISB CS1= VIH , CS2=VIL, Other inputs=V IH or V IL
ISB1
CS1>VCC-0.2V, CS 2>V C C-0.2V (CS 1 controlled)
or 0V<CS2<0.2V (CS2 controlled),
Other inputs=0~VCC
(Typ. condition : V C C=3.3V @ 25oC)
(Max. condition : VCC=3.6V @ 85oC)
LL
LF
Min Typ Max
-1 - 1
-1 - 1
- -3
- -3
- - 25
- - 20
- - 0.4
2.4 -
-
- - 0.3
- 0.51) 5
Unit
µA
µA
mA
mA
mA
V
V
mA
µA
NOTES
1. Typical values are measured at Vcc=3.3V, T A=25oC and not 100% tested.
4
4페이지 merging Memory & Logic Solutions Inc.
TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED)
Address
tWC
CS1
tCW (2)
CS2
tAW
EM610FV8 Series
Low Power, 128Kx8 SRAM
www.DataSheet4U.com
tWR(4)
WE
Data in
Data out
tWP(1)
tAS(3)
High-Z
tWHZ
Data Undefined
tDW tDH
Data Valid
High-Z
tOW
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 CONTROLLED)
tWC
Address
CS1
tAS(3)
tCW(2)
CS2
tAW
tWR(4)
WE
Data in
Data out
High-Z
tWP(1)
tDW tDH
Data Valid
High-Z
7
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ EM610FV8.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
EM610FV16 | 64K x 16 SRAM | Emerging Memory & Logic Solutions |
EM610FV8 | 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM | Emerging Memory & Logic Solutions |
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