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NTMS4807N 데이터시트 PDF




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부품번호 NTMS4807N 기능
기능 Power MOSFET ( Transistor )
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NTMS4807N 데이터시트, 핀배열, 회로
NTMS4807N
Power MOSFET
30 V, 14.8 A, N-Channel, SO-8
Features
ăLow RDS(on) to Minimize Conduction Losses
ăLow Capacitance to Minimize Driver Losses
ăOptimized Gate Charge to Minimize Switching Losses
ăThis is a Pb-Free Device
Applications
ăDisk Drives
ăDC-DC Converters
ăPrinters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation RqJA
(Note 1)
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
12.2
9.8
1.55
Continuous Drain
Current RqJA (Note 2)
Steady
TA = 25°C
TA = 70°C
ID
9.1
7.3
Power Dissipation RqJA State TA = 25°C PD 0.86
(Note 2)
Continuous Drain
Current RqJA, t v 10 s
(Note 1)
TA = 25°C ID 14.8
TA = 70°C
11.8
Power Dissipation
RqJA, t v 10 s(Note 1)
TA = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 14 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
PD 2.3
IDM 50
TJ, -55 to
Tstg 150
IS 2.9
EAS 98
TL 260
Unit
V
V
A
W
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction-to-Ambient – Steady State (Note 1)
RqJA
80.5 °C/W
Junction-to-Ambient – t v 10 s (Note 1)
RqJA
54.9
Junction-to-Foot (Drain)
RqJF
19.5
Junction-to-Ambient – Steady State (Note 2)
RqJA
145
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS
30 V
RDS(ON) MAX
6.1 mW @ 10 V
7.5 mW @ 4.5 V
ID MAX
14.8 A
N-Channel
D
G
S
1
SO-8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
Source
Source
Gate
8
Drain
Drain
Drain
Drain
Top View
4807N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4807NR2G SO-8 2500/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1
Publication Order Number:
NTMS4807N/D




NTMS4807N pdf, 반도체, 판매, 대치품
NTMS4807N
TYPICAL PERFORMANCE CURVES
4200
3500
Ciss
TJ = 25°C
VGS = 0 V
2800
2100
1400
Coss
700
0 Crss
05
10 15
20 25
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
30
10
QT
9
20
8 VDS
7
VGS
16
6
5
4 QGS
QGD
12
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8
3
24
1 ID = 14.8 A
TJ = 25°C
00
0 5 10 15 20 25 30 35 40 45 50
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate-To-Source and
Drain-To-Source Voltage vs. Total Charge
1000
VDD = 24 V
ID = 6.1 A
VGS = 10 V
100
td(off)
tf
tr
td(on)
10
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
6
VGS = 0 V
5 TJ = 25°C
4
3
2
1
0
0.4 0.5 0.6 0.7
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
0.8
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
10 100 ms
1 ms
1
VGS = 20 V
SINGLE PULSE
10 ms
0.1 TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
dc
0.01
0.1
PACKAGE LIMIT
1
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100
ID = 14 A
75
50
25
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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NTMS4807N

Power MOSFET ( Transistor )

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