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NTMS4800N 데이터시트 PDF




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기능 Power MOSFET ( Transistor )
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NTMS4800N 데이터시트, 핀배열, 회로
NTMS4800N
Power MOSFET
30 V, 8 A, NChannel, SOIC8
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
SOIC8 Surface Mount Package Saves Board Space
This is a PbFree Device
Applications
DCDC Converters
Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
6.4
5.1
1.29
Continuous Drain
Current RqJA (Note 2)
Steady
TA = 25°C
TA = 70°C
ID
4.9
3.9
Power Dissipation
(Note 2)
RqJA
State
TA = 25°C
PD
0.75
Continuous Drain
C(Nuortreen1t)RqJA, t < 10 s
TA = 25°C
TA = 70°C
ID
8.0
6.4
Power Dissipation
RqJA, t < 10 s (Note 1)
TA = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 11 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for t = 10 s)
PD 2.0
IDM 32
TTsJtg,
55 to
+150
IS 2.0
EAS 60.5
TL 260
Unit
V
V
A
W
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient – Steady State (Note 1)
JunctiontoAmbient – t < 10 s (Note 1)
RqJA
RqJA
97 °C/W
62.5
JunctiontoFoot (Drain)
RqJF
25
JunctiontoAmbient – Steady State (Note 2)
RqJA
167
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad, 1 oz Cu
2. Surfacemounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2009
August, 2009 Rev. 1
1
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http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
20 mW @ 10 V
27 mW @ 4.5 V
ID MAX
8A
NChannel
D
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
1
SO8
CASE 751
STYLE 12
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4800N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4800NR2G SOIC8 2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMS4800N/D




NTMS4800N pdf, 반도체, 판매, 대치품
NTMS4800N
TYPICAL PERFORMANCE CURVES
1350
1250
1150
1050
Ciss
TJ = 25°C
VGS = 0 V
950
850
750
650
550
450 Coss
350
250
150
50
Crss
0
5
10 15
20 25 30
DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
10
9 QT
20
8 VDS
7
VGS
16
6
5 QGS
4
QGD
12
www.DataSheet4U.com
8
3
24
1
0
ID = 7.5 A
TJ = 25°C
0
0 2 4 6 8 10 12 14 16
QG, TOTAL GATE CHARGE (nC)
Figure 8. GateToSource and
DrainToSource Voltage vs. Total Charge
1000
100
VDS = 15 V
ID = 1 A
VGS = 10 V
10
td(off)
tf
td(on)
tr
3
VGS = 0 V
TJ = 25°C
2
1
11 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
10 ms
10 100 ms
1 ms
1
VGS = 20 V
SINGLE PULSE
0.1 TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
10 ms
dc
0.010.1
PACKAGE LIMIT
1
10
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
0.3 0.4 0.5 0.6 0.7
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
0.8
Figure 10. Diode Forward Voltage vs. Current
75
ID = 11 A
50
25
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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NTMS4800N

Power MOSFET ( Transistor )

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