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NTMS4706N 데이터시트 PDF




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광범위하게 사용되는 반도체 소자입니다.


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부품번호 NTMS4706N 기능
기능 Power MOSFET ( Transistor )
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NTMS4706N 데이터시트, 핀배열, 회로
NTMS4706N
Power MOSFET
30 V, 10.3 A, Single N−Channel, SO−8
Features
Low RDS(on)
Low Gate Charge
Standard SO−8 Single Package
Pb−Free Package is Available
Applications
Notebooks, Graphics Cards
Synchronous Rectification
High Side Switch
DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t v 10 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
8.6
6.2
10.3
1.5
t v 10 s
2.2
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
6.4
4.6
0.83
Pulsed Drain Current
tp = 10 ms
IDM 31
Operating Junction and Storage Temperature
TJ, −55 to
Tstg 150
Source Current (Body Diode)
IS 2.1
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 V, VGS = 10 V, IL Peak = 7.5 A,
L = 10 mH, RG = 25 W)
EAS
150
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260
Unit
V
V
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
83.5 °C/W
Junction−to−Ambient – t v 10 s (Note 1)
RqJA
58
Junction−to−Ambient – Steady State (Note 2)
RqJA
150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS
RDS(ON) TYP
30 V
9.0 mW @ 10 V
11.4 mW @ 4.5 V
ID MAX
(Note 1)
10.3 A
N−Channel
D
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
1
SO−8
CASE 751
STYLE 12
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4706N = Device Code
A = Assembly Location
L = WaferLot
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4706NR2
SO−8 2500/Tape & Reel
NTMS4706NR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 3
1
Publication Order Number:
NTMS4706N/D




NTMS4706N pdf, 반도체, 판매, 대치품
NTMS4706N
TYPICAL PERFORMANCE CURVES
1800
VDS = 0 V VGS = 0 V
TJ = 25°C
5
QT
20
1500 Ciss
1200
900 Crss
600
300
0
20
10 0 10
VGS VDS
4 VDS
QGS
Ciss 3
QGD
16
VGS
12
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2
Coss
1
Crss
0
20 30 0
8
4
ID = 10 A
TJ = 25°C
0
2 4 6 8 10
QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
1000
VDD = 10 V
ID = 10.3 A
VGS = 4.5 V
100 tr
tf
10
td(off)
td(on)
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
7
VGS = 0 V
6 TJ = 25°C
5
4
3
2
1
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1
Figure 10. Diode Forward Voltage vs. Current
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NTMS4706N

Power MOSFET ( Transistor )

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