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Número de pieza | NTGS3441B | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
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No Preview Available ! NTGS3441B
Power MOSFET
-20 V, -3.5 A, Single P-Channel, TSOP-6
Features
•ăLow RDS(on) in TSOP-6 Package
•ă2.5 V Gate Rating
•ăThis is a Pb-Free Device
Applications
•ăBattery Switch and Load Management Applications in Portable
Equipment
•ăHigh Side Load Switch
•ăPortable Devices like Games and Cell Phones
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
tv5s
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
-20
$8
-3.0
-2.4
-3.5
1.1
V
V
A
W
tv5s
1.6
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
ID
PD
-2.2 A
-1.8
0.7 W
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDM
TJ,
TSTG
TL
-12
-55 to
150
260
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size.
(Cu area = 0.0775 in sq).
©Ă Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 0
1
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
-20 V
RDS(on) MAX
90 mW @ -4.5 V
130 mW @ -2.5 V
ID MAX
-3.0 A
-2.4 A
P-Channel
1256
3
4
MARKING
DIAGRAM
TSOP-6
CASE 318G
SF MG
1 STYLE 1
G
1
SF = Device Code
M = Date Code
G = Pb-Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 54
1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping†
NTGS3441BT1G TSOP-6 3000 / Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTGS3441B/D
1 page 1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
Single Pulse
0.001
NTGS3441B
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
www.DataSheet4U.com
Test Type = 1 sq in 2 oz
RqJA = 1 sq in 2 oz
0.01 0.1
1
PULSE TIME (s)
Figure 12. FET Thermal Response
10
100 1000
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTGS3441B.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTGS3441 | Power MOSFET ( Transistor ) | ON Semiconductor |
NTGS3441B | Power MOSFET ( Transistor ) | ON Semiconductor |
NTGS3441P | Power MOSFET ( Transistor ) | ON Semiconductor |
NTGS3441T1 | Power MOSFET 1 Amp 20 Volts | ON Semiconductor |
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