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PDF NVD5803N Data sheet ( Hoja de datos )
| Número de pieza | NVD5803N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NVD5803N
Power MOSFET
40 V, 85 A, Single N−Channel, DPAK
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC Motor Drive
• Reverse Battery Protection
• Glow Plug
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
C(Nuorrteen1t)(RqJC)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
IDM
TJ, Tstg
40
"20
85
61
83
228
−55 to
175
V
V
A
W
A
°C
Source Current (Body Diode)
IS 85 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 40 A, L = 0.3 mH)
EAS
240 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient − Steady State (Note 1) RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
www.DataSheet4U.com
Value
1.8
42
Unit
°C/W
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
5.7 mW @ 10 V
D
ID MAX
85 A
G
S
N−CHANNEL MOSFET
4
12
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
5803N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 0
1
Publication Order Number:
NVD5803N/D
1 page  
NVD5803N
TYPICAL CHARACTERISTICS
10
1 Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 13. Thermal Response
www.DataSheet4U.com
http://onsemi.com
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