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PDF NUS5531MT Data sheet ( Hoja de datos )
| Número de pieza | NUS5531MT | |
| Descripción | Main Switch Power MOSFET and Single Charging BJT | |
| Fabricantes | ON Semiconductor | |
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NUS5531MT
Main Switch Power
MOSFET and Single
Charging BJT
−12 V, −6.2 A, Single P−Channel FET with
Single PNP low Vce(sat) Transistor,
3x3 mm WDFN Package
This device integrates one high performance power MOSFET and
one low Vce(sat) transistor, greatly reducing the layout space and
optimizing charging performance in battery−powered portable
electronics.
Features
• High Performance Power MOSFET
• Single Low Vce(sat) Transistor as Charging Power Mux
• 3.0x3.0x0.8 mm WDFN Package
• Independent Pin−out Provides Circuit Flexibility
• Low Profile (<0.8 mm) for Easy Fit in Thin Environments
• This is a Pb−Free Device
Applications
• Main Switch and Battery Charging Mux for Portable Electronics
• Optimized for Commercial PMUs from Top Suppliers (See Figure 2)
Emitter 1
Emitter 2
Collector 3
Source 4
8 Base
7 N/C
6 Gate
5 Drain
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MOSFET
V(BR)DSS
RDS(on) TYP
ID MAX
−12 V
32 mW @ −4.5 V
44 mW @ −2.5 V
−6.2 A
Low Vce(sat) PNP (Wall/USB)
VCEO MAX
VEBO MAX
IC MAX
−20 V
−7.0 V
−2.0 A
8
1
WDFN8
CASE 506BC
MARKING DIAGRAM
1 5531
AYWW G
G
5531 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Base 8
NC 7
Collector
10
GATE 6
Drain 5
Drain
9
1 Emitter
2 Emitter
3 Collector
4 Source
(Bottom View)
(Top View)
Figure 1. Simple Schematic
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ORDERING INFORMATION
Device
Package
Shipping†
NUS5531MTR2G WDFN8 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
July, 2008 − Rev. 1
Publication Order Number:
NUS5531MT/D
1 page  
NUS5531MT
TYPICAL CHARACTERISTICS − MOSFET
6 −1.7 − −8.0 V
−1.6 V
5 −1.5 V
4
VGS = −1.4 V
3
2
1
0 TJ = 25°C
01 2 3 45 6
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 3. On−Region Characteristics
6 VDS ≥ −10 V
5
4
TJ = 25°C
3 TJ = 100°C
TJ = −55°C
2
1
0
0.5
1.0 1.5
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 4. Transfer Characteristics
2.0
0.05
VGS = 4.5 V
0.04
TJ = 100°C
0.05
TJ = 25°C
0.04
VGS = −2.5 V
TJ = 25°C
0.03
TJ = −55°C
0.02
12 3 4 5
−ID, DRAIN CURRENT (A)
Figure 5. On−Resistance vs. Drain Current
6
0.03
VGS = −4.5 V
0.02
12 3 4 5 6
−ID, DRAIN CURRENT (A)
Figure 6. On−Resistance vs. Drain Current and
Gate Voltage
1.6
ID = −3 A
VGS = −4.5 V
1.4
10,000
VGS = 0 V
TJ = 150°C
1.2
1,000
1.0
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0.6
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. On−Resistance Variation with
Temperature
150
TJ = 100°C
100
2 4 6 8 10 12
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
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5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NUS5531MT.PDF ] | |
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