Datasheet.kr   

EIA1114-4 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EIA1114-4
기능 11.0-14.0 GHz 4-Watt Internally Matched Power FET
제조업체 Excelics Semiconductor
로고 Excelics Semiconductor 로고 



전체 1 페이지

		

No Preview Available !

EIA1114-4 데이터시트, 핀배열, 회로
UPDATED 07/25/2006
EIA1114-4
11.0-14.0GHz 4-Watt Internally Matched Power FET
FEATURES
11.0– 14.0GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
-36 dBc IM3 at Po = 25.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
.060 MIN.
.650±.008 .512
GATE
Excelics
EIA1114-4
YYWW
.060 MIN.
DRAIN
.022
.319
SN
.094
.382
.045
.004 .070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f = 11.0-14.0GHz
VDS = 8 V, IDSQ 1500mA
Gain at 1dB Compression
f = 11.0-14.0GHz
VDS = 8 V, IDSQ 1500mA
Gain Flatness
f = 11.0-14.0GHz
VDS = 8 V, IDSQ 1500mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ 1500mA
f = 11.0-14.0GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 11.0-14.0GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
VDS = 8 V, IDSQ 65% IDSS
f = 14.0GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 29 mA
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN
35.5
6.0
TYP
36.5
7.0
25
1700
MAX
±0.8
2000
UNITS
dBm
dB
dB
%
mA
-36 dBc
2880
3600
mA
-1.0 -2.5
V
5.5 6.0 oC/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf Forward Gate Current
Igsr
Reverse Gate Current
Pin Input Power
www.DataSheeTtc4Uh .com
Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
10
-5
43.2mA
-7.2mA
35.5dBm
175 oC
-65 to +175 oC
25W
CONTINUOUS2
8V
-3V
14.4mA
-2.4mA
@ 3dB Compression
175 oC
-65 to +175 oC
25W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised July 2006






구       성총 1 페이지
다운로드[ EIA1114-4.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
EIA1114-2

11.0-14.0 GHz 2-Watt Internally Matched Power FET

Excelics Semiconductor
Excelics Semiconductor
EIA1114-4

11.0-14.0 GHz 4-Watt Internally Matched Power FET

Excelics Semiconductor
Excelics Semiconductor

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵