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Datasheet HF152F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HF152F | SUBMINIATURE HIGH POWER RELAY 20 |~} 0
;=,5363+<=:/ 2312 87?/: :/4+@
0EBOPMEN
V V V V V V V V V V 64@ koal[`af_ [YhYZadalq RT1< 569T@B Qmj_] ngdlY_] mh lg :cT .Z]lo]]f [gad Yf\ [gflY[lk/ R`]jeYd [dYkk E> klYf\Yj\ lqh] .Yl <9 / @eZa]fl l]eh]jYlmj] e]]lk 549 Njg\m[l af Y[[gj\Yf[] lg HDB :477915 5 Egje B - 5 Egje @ [gf^a_mjYlagfk |  Hongfa Technology | relay |
HF1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HF10-12F | NPN SILICON RF POWER TRANSISTOR HF10-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF10-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES:
• PG = 20 dB min. at 10 W/30 MHz • IMD3 = -30 dBc max. at 10 W (PEP) • Omnigold™ Metalization System
F
E B
C D E
C E
Ø.125 NOM. FULL R J .125
MAX  Advanced Semiconductor transistor | | |
| 2 | HF10-12S | NPN SILICON RF POWER TRANSISTOR HF10-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• PG = 20 dB min. at 10 W/30 MHz • IMD3 = -30 dBc max. at 10 W (PEP) • Omnigold™ Metalization System
B
C E
ØC
E B
H I J
D
MAXIMUM RATINGS
IC VCBO V Advanced Semiconductor transistor | | |
| 3 | HF100-12 | NPN SILICON RF POWER TRANSISTOR HF100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF100-12 is Designed for
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R Ø.125 NOM. L
FEATURES:
• PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System
C B
E H
D G
F K
MAXIMUM RA Advanced Semiconductor transistor | | |
| 4 | HF100-28 | NPN SILICON RF POWER TRANSISTOR HF100-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions.
PACKAGE STYLE .500 4L FLG
.112x45° A L
FEATURES:
• PG = 15 dB m Advanced Semiconductor transistor | | |
| 5 | HF1008 | Unshielded Surface Mount Inductors Inductors RF
TESTSFRCMRFUDAEMRMCXQRIAIUNRMEXEIEQUMNINSMMTUMCIUSMR(IYNMTOAA((IHMMTM(NmMIUHHNCASMzzGE)))) INDDUACSTOTHALNNEUCRMEABN(EnCRHE*)
SERIES
HF1008R HF1008
Unshielded Surface Mount Inductors
Actual Size
Physical Parameters
Inches
Millimeters
A
0.095 to 0.115
2.41 to 2.92
B
0.085 to  Delevan inductor | | |
| 6 | HF1008R | Unshielded Surface Mount Inductors Inductors RF
TESTSFRCMRFUDAEMRMCXQRIAIUNRMEXEIEQUMNINSMMTUMCIUSMR(IYNMTOAA((IHMMTM(NmMIUHHNCASMzzGE)))) INDDUACSTOTHALNNEUCRMEABN(EnCRHE*)
SERIES
HF1008R HF1008
Unshielded Surface Mount Inductors
Actual Size
Physical Parameters
Inches
Millimeters
A
0.095 to 0.115
2.41 to 2.92
B
0.085 to Delevan inductor | | |
| 7 | HF102F | MINIATURE HIGH POWER RELAY 86.-/6
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w=@9 ~Ccoieegifig
w=@9 ~Ccot,tfheegenmfkj
6JGTURJS
V icj?1 8=9@97HF=7 GHF9B;H< ]69HK99B 7C=@ 5B8 7CBH57HG^
V y95JM @C58 ID HC jeee1r V z895@ :CF ACHCF GK=H7<=B; V +ts \ ,t @5MCIHG 5J5=@56@9 V 0| =BGI@5H=CB GMGH9Ao t@5GG w V vBJ=FCBA9BH5@ :F=9 Hongfa Technology relay | |
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