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PDF AWT6301R Data sheet ( Hoja de datos )
| Número de pieza | AWT6301R | |
| Descripción | LINEAR POWER AMPLIFIER MODULE | |
| Fabricantes | ANADIGICS | |
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FEATURES
• InGaP HBT Technology
• High Efficiency:
40%, VMODE = 0 V
41%, VMODE = +2.85 V (no mode switching)
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• VREF = +2.85 V (+2.75 V Min Over Temp.)
• Optimized for a 50 Ω System
• Low Profile Surface Mount Package: 1.1mm
• CDMA 1XRTT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
• RoHS Compliant Package, 250 oC MSL-3
APPLICATIONS
• CDMA/EVDO Cell-band Wireless Handsets and
Data Devices
PRODUCT DESCRIPTION
The AWT6301R meets the increasing demands for
higher efficiency and linearity in CDMA1X handsets.
The package pinout was chosen to enable handset
manufacturers to switch from a 4mm x 4mm PA
module with very few layout changes to the phone
board. The device is manufactured on an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
AWT6301R
Cellular CDMA 3.4 V/28 dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.0
M9 Package
8 Pin 3 x 3 x 1 mm
Surface Mount Module
Selectable bias modes that optimize efficiency
for different output power levels, and a shutdown
mode with low leakage current, serve to increase
handset talk and standby time. The self contained
3 mm x 3 mm x 1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency and linearity in a 50 Ω system.
www.DataSheet4U.com
VREF 1
VMODE 2
GND at slug (pad)
8 GND
Bias Control
7 RFOUT
RFIN 3
6 GND
VCC1 4
V5 CC2
Figure 1: Block Diagram
10/2008
1 page  
Table 5: Electrical Specifications - CDMA Operation in Low Power Mode
(TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, VMODE = +2.85 V, 50 Ω system)
AWT6301R
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Gain
24 27.0 29
24 26.5 28
Adjacent Channel Power
at 885 kHz offset (1)
Primary Channel BW = 1.23 MHZ
Adjacent Channel BW = 30 kHz
-
-
-50 -47
-51 -47
dB
POUT = +28 dBm
POUT = +16 dBm
dBc
POUT = +28 dBm
POUT = +16 dBm
Adjacent Channel Power
at 1.98 MHz offset (1)
Primary Channel BW = 1.23 MHZ
Adjacent Channel BW = 30 kHz
-
-
-61 -57
-65 -57
dBc
POUT = +28 dBm
POUT = +16 dBm
Power-Added Efficiency (1)
37 41
89
-
-
%
POUT = +28 dBm
POUT = +16 dBm
Quiescent Current (Icq)
- 50 70 mA VMODE = +2.85 V, Low Bias
Reference Current
- 1.5 3
mA through VREF pin
Mode Control Current
- 0.3 1.0 mA through VMODE pin
Leakage Current
- <1 5
A
VCC = +4.2 V, VREF = 0 V,
VMODE = 0 V
Noise in Receive Band
- -133 -131 dBm/Hz 869 MHz to 894 MHz
Harmonics
2fo
3fo, 4fo
-
-
-35 -30
-50 -30
dBc
Input Impedance
- - 2:1 VSWR
Spurious Output Level
(all spurious outputs)
POUT < +28 dBm
In-band Load VSWR < 5:1
- - -65 dBc Out-of-band Load VSWR < 10:1
Applies over all operating
conditions
Load mismatch stress with no
wwpwer.DmatnaeSnhtedeet4gUra.cdoamtion or failure
10:1
Notes:
(1) PAE and ACP limit applies at 836.5 MHz.
-
-
VSWR
Applies over all operating
conditions
Data Sheet - Rev 2.0
10/2008
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AWT6301R.PDF ] | |
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