DataSheet.es    


PDF AWT6302 Data sheet ( Hoja de datos )

Número de pieza AWT6302
Descripción LINEAR POWER AMPLIFIER MODULE
Fabricantes ANADIGICS 
Logotipo ANADIGICS Logotipo



Hay una vista previa y un enlace de descarga de AWT6302 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! AWT6302 Hoja de datos, Descripción, Manual

FEATURES
• InGaP HBT Technology
• High Efficiency: 40%
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• VREF = +2.8 V (+2.7 V min over temp)
• Optimized for a 50 System
• Low Profile Miniature Surface Mount Package:
1.1mm
• CDMA 1XRTT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration
From 4mm x 4mm Package
APPLICATIONS
• PCS CDMA Wireless Handsets
• Dual Band CDMA Wireless Handsets
AWT6302
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
ADVANCED PRODUCT INFORMATION - Rev 0.1
M9 Package
8 Pin 3mm x 3mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6302 meets the increasing demands for
higher efficiency and linearity in CDMA 1X handsets,
while reducing pcb area by 44%. The package
pinout was chosen to enable handset
manufacturers to switch from a 4mm x 4mm PA
module with very few layout changes to the phone
board. The PA module is optimized for VREF = +2.8 V, a
requirement for compatibility with the Qualcomm®
6000 chipset. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
3mm x 3mm surface mount package incorporates
matching networks optimized for output power,
efficiency, and linearity in a 50 system.
GND at slug (pad)
VCC 1
8 VCC
www.DataSheet4U.com
RFIN 2
7 RFOUT
VMODE 3
Bias Control
6 GND
VREF 4
5 GND
Figure 1: Block Diagram
04/2003

1 page




AWT6302 pdf
AWT6302
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the VREF and VMODE voltages.
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the VMODE voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
APPLICATION
CDMA - low power
CDMA - high power
Shutdown
Table 5: Bias Control
POUT
LEVELS
BIAS
MODE
VREF
<+16dBm
Low +2.8 V
>+16 dBm
High +2.8 V
- Shutdown 0 V
VMODE
+2.8 V
0V
0V
www.DataSheet4U.com
ADVANCED PRODUCT INFORMATION - Rev 0.1
04/2003
5

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet AWT6302.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
AWT6301LINEAR POWER AMPLIFIER MODULEANADIGICS
ANADIGICS
AWT6301RLINEAR POWER AMPLIFIER MODULEANADIGICS
ANADIGICS
AWT6302LINEAR POWER AMPLIFIER MODULEANADIGICS
ANADIGICS
AWT6302RLINEAR POWER AMPLIFIER MODULEANADIGICS
ANADIGICS

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar