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PDF AWT6302R Data sheet ( Hoja de datos )
| Número de pieza | AWT6302R | |
| Descripción | LINEAR POWER AMPLIFIER MODULE | |
| Fabricantes | ANADIGICS | |
| Logotipo |  |
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FEATURES
• InGaP HBT Technology
• High Efficiency:
39%, VMODE = 0 V
40%, VMODE = +2.85 V (no mode switching)
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• VREF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package:
1.1 mm
• CDMA 1XRTT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
• RoHS-Compliant Package, 250 oC MSL-3
APPLICATIONS
• CDMA/EVDO PCS-band Wireless Handsets and
Data Devices
AWT6302R
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.1
M9 Package
8 Pin 3 mm x 3 mm x 1.1 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6302R meets the increasing demands for
higher efficiency and linearity in CDMA 1X handsets,
while reducing pcb area by 44%. The package pinout
was chosen to enable handset manufacturers to
switch from a 4 mm x 4 mm PA module with very few
layout changes to the phone board. The PA module is
optimized for VREF = +2.85 V. The device is manufactured
on an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
3 mm x 3 mm x 1.1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 Ω system.
GND at slug (pad)
www.DataSheet4U.com
VCC 1
8 VCC
RFIN 2
7 RFOUT
VMODE 3
Bias Control
6 GND
VREF 4
5 GND
Figure 1: Block Diagram
09/2008
1 page  
Table 5: Electrical Specifications
(TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, VMODE = +2.85 V, 50 Ω system)
AWT6302R
PARAMETER
MIN TYP MAX UNIT COMMENTS
Gain
24 26 28
22 24.5 27
dB
POUT = +28 dBm
POUT = +16 dBm
Adjacent Channel Power
at +1.25 MHz offset
Primary Channel BW - 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-
-52 -47
-51 -47
dBc
POUT = +28 dBm
POUT = +16 dBm
Adjacent Channel Power
at +2.25 MHz offset
Primary Channel BW - 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-
-61 -57
-69 -57
dBc
POUT = +28 dBm
POUT = +16 dBm
Power-Added Efficiency
37 40
8.3 9
-
-
%
POUT = +28 dBm
POUT = +16 dBm
Quiescent Current (Icq)
- 48 62 mA VMODE = +2.85 V
Reference Current
- 2.3 4 mA through VREF pin, PA "on"
Mode Control Current
- 0.3 1.0 mA through VMODE pin
Leakage Current
-
<1 5
µA
VCC = +4.2 V, VREF = 0 V,
VMODE = 0 V
Noise in Receive Band
- -132 -130 dBm/Hz 1930 MHz to 1990 MHz
Harmonics
2fo
3fo, 4fo
-
-
-40 -30
-55 -30
dBc
Input Impedance
- - 2.5:1 VSWR
Spurious Output Level
(all spurious outputs)
POUT < +28 dBm
-
-
-65
dBc
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating ranges
Load mismatch stress with no
permanent degradation or failure
8:1
-
wwNowte.Ds:ataSheet4U.com
1. ACPRs and Efficiency Limits at mid-band only.
- VSWR Applies over full operating range
Data Sheet - Rev 2.1
09/2008
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AWT6302R.PDF ] | |
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