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부품번호 | AWT6307R 기능 |
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기능 | LINEAR POWER AMPLIFIER MODULE | ||
제조업체 | ANADIGICS | ||
로고 | |||
전체 8 페이지수
FEATURES
• InGaP HBT Technology
• High Efficiency:
21 % @ +16 dBm output
40 % @ +28 dBm output
• Low Quiescent Current: 16 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• Internal Voltage Regulation
• Optimized for a 50 Ω System
• Low Profile Surface Mount Package: 1 mm
• CDMA 1XRTT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
• RoHS Compliant Package, 250 oC MSL-3
APPLICATIONS
• CDMA Wireless Handsets and Data Devices
PRODUCT DESCRIPTION
The AWT6307R meets the increasing demands for
higher efficiency and smaller footprint in CDMA 1X
handsets. The package pinout was chosen to
enable handset manufacturers to switch from a
4 mm x 4 mm PA module with few layout changes
while reducing board area requirements by 44 %.
The AWT6307R uses ANADIGICS’ exclusive InGaP-
Plus™ technology, which combines HBT and
pHEMT devices on the same die, to enable state-
of-the-art reliability, temperature stability, and
ruggedness. The AWT6307R is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP™) family of
CDMA power amplifiers, which deliver low quiescent
currents and significantly greater efficiency without
a costly external DAC or DC-DC converter. Through
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levels, specifically at low- and mid-range power
levels where the PA typically operates, thereby
dramatically increasing handset talk-time and
standby-time. Its built-in voltage regulator eliminates
the need for external voltage regulation
components. The 3 mm x 3 mm x 1 mm surface
mount package incorporates matching networks
optimized for output power, efficiency and linearity
in a 50 Ω system.
AWT6307R
HELPTM Cellular CDMA 3.4 V/28 dBm
Linear PowerAmplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
AWT6307R
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
VEN 1
VMODE 2
GND at slug (pad)
8 GND
Bias Control
7 RFOUT
RFIN 3
6 GND
VBATT 4
5 VCC
Figure 1: Block Diagram
03/2006
AWT6307R
PARAMETER
Table 4: Electrical Specifications - CDMA Operation
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +2.4 V, 50 Ω system)
MIN TYP MAX UNIT
COMMENTS
Gain
25 27 30
15 17 19
16 17.5 20
Adjacent Channel Power
at ±885 kHz offset (1)
Primary Channel BW = 1.23 MHZ -
-50 -47
Adjacent Channel BW = 30 kHz
- -57 -47
- -55 -47
Adjacent Channel Power
at ±1.98 MHz offset (1)
Primary Channel BW = 1.23 MHZ -
-63 -57
Adjacent Channel BW = 30 kHz
- -61 -57
Power-Added Efficiency (1)
37 40
17 21
-
-
POUT = +28 dBm, VMODE = 0 V
dB POUT = +16 dBm, VMODE = +2.4 V
POUT = +17 dBm, VMODE = +2.4 V,
VCC = +3.7 V
POUT = +28 dBm, VMODE = 0 V
dBc POUT = +16 dBm, VMODE = +2.4 V
POUT = +17 dBm, VMODE = +2.4 V,
VCC = +3.7 V
dBc
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.4 V
%
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.4 V
Quiescent Current (Icq)
- 14 20 mA VMODE = +2.4 V, Low Bias
Enable Current
- 0.4 0.8 mA through VEN pin, VMODE = +2.4 V
Battery Current
- 2.5 5
mA through VBATT pin, VMODE = +2.4 V
Mode Control Current
- 0.5 0.8 mA through VMODE pin, VMODE = +2.4 V
Leakage Current
- <1 5
µA VCC = +4.2 V, VEN = 0 V,
VMODE = 0 V
Noise in Receive Band
- -133 -131 dBm/Hz 869 MHz to 894 MHz
Harmonics
2fo
3fo, 4fo
-
-
-42 -30
-50 -30
dBc
Input Impedance
- - 2:1 VSWR
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Spurious Output Level
(all spurious outputs)
POUT < +28 dBm
In-band Load VSWR < 5:1
- - -65 dBc Out-of-band Load VSWR < 10:1
Applies over all operating
conditions
Load mismatch stress with no
permanent degradation or failure
8:1
Notes:
(1) PAE and ACP limit applies at 836.5 MHz.
-
-
VSWR
Applies over all operating
conditions
4 PRELIMINARY DATA SHEET - Rev 1.0
03/2006
4페이지 COMPONENT PACKAGING
Pin 1
AWT6307R
Figure 6: Tape & Reel Packaging
PACKAGE TYPE
Table 6: Tape & Reel Dimensions
TAPE WIDTH POCKET PITCH REEL CAPACITY MAX REEL DIA
3 mm x 3 mm x 1 mm
12 mm
4 mm
2500
7"
www.DataSheet4U.com
PRELIMINARY DATA SHEET - Rev 1.0
03/2006
7
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
AWT6307R | LINEAR POWER AMPLIFIER MODULE | ANADIGICS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |