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PDF AWT6308R Data sheet ( Hoja de datos )
| Número de pieza | AWT6308R | |
| Descripción | LINEAR POWER AMPLIFIER MODULE | |
| Fabricantes | ANADIGICS | |
| Logotipo |  |
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FEATURES
• InGaP HBT Technology
• High Efficiency:
19 % @ +16 dBm output
40 % @ +28 dBm output
• Low Quiescent Current: 16 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• Internal Voltage Regulation
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package:
1 mm
• CDMA 1XRTT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
• RoHS-Compliant Package, 250 oC MSL-3
APPLICATIONS
• CDMA Wireless Handsets and Data Devices
AWT6308R
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
AWT6308R
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6308R meets the increasing demands for
higher efficiency and smaller footprint in CDMA 1X
handsets. The package pinout was chosen to
enable handset manufacturers to switch from a
4 mm x 4 mm PA module with few layout changes
while reducing board area requirements by 44%.
The AWT6308R uses ANADIGICS’ exclusive InGaP-
Plus™ technology, which combines HBT and
pHEMT devices on the same die, to enable state-of-
the-art reliability, temperature stability, and
ruggedness. The AWT6308R is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP™) family of
CDMA power amplifiers, which deliver low quiescent
currents and significantly greater efficiency without
a costly external DAC or DC-DC converter. Through
wwsewle.DctaatbalSehebeiat4sUm.coomdes, the AWT6308R achieves
optimal efficiency across different output power
levels, specifically at low- and mid-range power
levels where the PA typically operates, thereby
dramatically increasing handset talk-time and
standby-time. Its built-in voltage regulator eliminates
the need for external voltage regulation
components. The 3 mm x 3 mm x 1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50 Ω
system.
VBATT 1
GND at slug (pad)
8 VCC
RFIN 2
7 RFOUT
VMODE 3
VEN 4
Bias Control
6 GND
5 GND
Figure 1: Block Diagram
03/2006
1 page  
AWT6308R
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the VREF and VMODE voltages.
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the VMODE voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
APPLICATION
CDMA - low power
CDMA - high power
Shutdown
Table 5: Bias Control
POUT
LEVELS
LOGIC
VEN
<+16dBm
Low +2.4 V
>+16 dBm
High +2.4 V
- Shutdown 0 V
VMODE
+2.4 V
0V
0V
VBATT
RF IN
VMODE
VENABLE
C5
2.2µF
C1 GND
1000 pF at slug
1 VBATT
VCC 8
2 RFIN
3 VMODE
4 VENABLE
RFOUT 7
GND 6
GND 5
C2
0.01µF
C3
1000 pF
C4
2.2 µF
VCC
C6
68 pF
RF OUT
www.DataSheet4U.com
Figure 3: Application Circuit
PRELIMINARY DATA SHEET - Rev 1.0
03/2006
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AWT6308R.PDF ] | |
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