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AWT6314R 데이터시트 PDF




ANADIGICS에서 제조한 전자 부품 AWT6314R은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 AWT6314R 기능
기능 LINEAR POWER AMPLIFIER MODULE
제조업체 ANADIGICS
로고 ANADIGICS 로고


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AWT6314R 데이터시트, 핀배열, 회로
FEATURES
• Single Mode Operation: POUT +28 dBm
• High Efficiency: 54 % AMPS, 39 % CDMA
• Low Quiescent Current: 50 mA
• 25 % Package Size Reduction
• Common VMODE Control Line
• Simplified VCC Bus PCB routing
• Reduced External Component Count
• Low Profile Surface Mount Package: 1.1 mm
• RoHS Compliant Package, 250 oC MSL-3
APPLICATIONS
• Dual-band Cellular/PCS CDMA Wireless
Handsets
AWT6314R
Dual-band CDMA/PCS
3.4 V/28 dBm Linear PowerAmplifier Module
PRELIMINARY DATA SHEET - Rev 1.2
AWT6314
M23 Package
12 Pin 3 mm x 5 mm x 1 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6314R meets the increasing demands for
higher levels of integration in dual-band CDMA/PCS
1X handsets, while reducing board area
requirements by 25 %. The package pinout was
chosen to enable handset manufacturers to easily
route VCC to both power amplifiers and simplify
control with a common VMODE pin. The device is
manufactured on an advanced InGaP HBT MMIC
technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different
output power levels, and a shutdown mode with low
leakage current, serve to increase handset talk and
standby time. The self contained 3 mm x 5 mm x 1
mm surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50 system.
GND at slug (pad)
VREF_PCS 1
RFIN_PCS 2
Bias Control
12 RFOUT_PCS
11 GND
www.DataSheet4U.com
VCC1 3
10 VCC2
VMODE 4
9 VCC2 A
RFIN_CELL 5
8 RFOUT_CELL
VREF_CELL 6
Bias Control
7 GND
GND
Figure 1: Block Diagram
05/2006




AWT6314R pdf, 반도체, 판매, 대치품
AWT6314R
Table 4: Electrical Specifications - AMPS Operation
(TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, VMODE = 2.85 V, POUT = +31 dBm, 50 system)
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Gain
24 26 29
dB
Gain Variation
- 0.4 1.0 dB
Power-Added Efficiency (1)
50 54
-
%
Quiescent Current (Icq)
- 50 68 mA Low Bias
Reference Current
- 1.5 3
mA through VREF pin, PA "ON"
Leakage Current
-
<1 5
µA VCC = +4.3 V, VREF = 0 V,
VMODE = 0 V
Noise in Receive Band
- -134 -132 dBm/Hz 869 MHz to 894 MHz
Harmonics
2fo
3fo, 4fo
-
-
-44 -30
-46 -30
dBc
Input Impedance
- - 2:1 VSWR
Spurious Output Level
(all spurious outputs)
POUT < +31 dBm
In-band Load VSWR < 5:1
- - -65 dBc Out-of-band Load VSWR < 10:1
Applies over all operating
conditions
Load mismatch stress with no
permanent degradation or failure
Notes:
(1) PAE limit applies at 836.5 MHz.
10:1
-
-
VSWR
Applies over all operating
conditions
www.DataSheet4U.com
4 PRELIMINARY DATA SHEET - Rev 1.2
05/2006

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AWT6314R 전자부품, 판매, 대치품
AWT6314R
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying a logic low levels (see Operating
Ranges table) to both the VREF and VMODE voltages.
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the VMODE voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
APPLICATION
AMPS
CDMA - All power
CDMA - All power
Shutdown
Table 7: Bias Control
POUT
LEVELS
BIAS
MODE
VREF
VMODE
(all) Low +2.85 V +2.85 V
<28 dBm Low +2.85 V +2.85 V
<28 dBm High +2.85 V 0 V
- Shutdown 0 V 0 V
VREF_PCS
RFIN_PCS
0.01 µF
1
2
VCC1
2.2 µF
VMODE
RFIN_CELL
1000 pF
3
4
5
VREF_CELL
www.DataSheet4U.com
0.01 µF
6
GND at slug (pad)
Bias Control
68 pF
12
11 GND
10 TRL
2.2 µF
Note 1
3.9 nH
9
1000 pF
68 pF
8
VCC2
Bias Control
GND
7 GND
Note:
1. 3.9 nH Inductor should be rated for >1 Amp.
Figure 3: Application Circuit
PRELIMINARY DATA SHEET - Rev 1.2
05/2006
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부품번호상세설명 및 기능제조사
AWT6314R

LINEAR POWER AMPLIFIER MODULE

ANADIGICS
ANADIGICS

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