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PDF PJ4N3KDW Data sheet ( Hoja de datos )
| Número de pieza | PJ4N3KDW | |
| Descripción | 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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PJ4N3KDW
30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R , V @2.5V,I @1mA=7.0Ω
DS(ON) GS
DS
• RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• The MOSFET elements are independent,eliminating interference
• Mounting cost and area can be cut in half
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems,Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Low voltage drive (2.5V) makes this device ideal for portable
equipment
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 4N3
654
123
Absolute Maximum Ratings (T =25OC )
A
Parameter
Drain-Source Voltage
Gate-Source Voltagee
Continuous Drain Current
Pulsed Drain Current (1)
Maximum power Dissipation
TA =2 5 OC
TA =7 5 OC
www.DaOtapSehr aeetitn4gU.Jcuonmc ti o n a nd S to r a g e Te mp e r a tur e Ra ng e
Junction-to Ambient Thermal Resistance
(PCB mounted)2
S ymb o l
VDS
V GS
ID
I DM
PD
TJ,TSTG
RθJA
Limit
30
+ 20
100
800
200
120
-55 to + 150
625
Uni ts
V
V
mA
mA
mW
OC
OC /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.3-SEP.25.2009
PAGE . 1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PJ4N3KDW.PDF ] | |
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