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Datasheet PJDLC24 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJDLC24 | ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR PJDLC03~PJDLC24
VOLTAGE 3.3 to 24 Volts POWER 400 Watts
0.006(0.15)MIN.
0.008(0.20) 0.003(0.08) 0.044(1.10) 0.035(0.90) 0.020(0.50) 0.013(0.35)
ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES
This transient overvoltage suppressor is intended to prodect sensitive equ |  Pan Jit International | data |
| 2 | PJDLC24 | ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR PJDLC05~PJDLC24
VOLTAGE
5 to 24 Volts
WPOATWTER 400 Watts
ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES
This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion |  Shunye | data |
PJD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJD06N03 | N-Channel Enhancement Mode MOSFET
PJD06N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), [email protected],IDS@30A=9mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Pan Jit International mosfet | | |
| 2 | PJD09N03 | N-Channel Enhancement Mode MOSFET
PJD09N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Pan Jit International mosfet | | |
| 3 | PJD10P10A | 100V P-Channel Enhancement Mode MOSFET PPJD10P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-10 A
Features
RDS(ON), VGS@-10V,ID@-5A<210mΩ RDS(ON), [email protected],ID@-3A<230mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compli Pan Jit International mosfet | | |
| 4 | PJD14P06-AU | 60V P-Channel Enhancement Mode MOSFET PPJD14P06-AU
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-14 A
Features
RDS(ON), VGS@-10V,ID@-7A<115mΩ RDS(ON), [email protected],[email protected]<160mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Acqire quality s Pan Jit International mosfet | | |
| 5 | PJD14P06A | 60V P-Channel Enhancement Mode MOSFET PPJU14P06A / PJD14P06A
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-14 A
Features
RDS(ON), VGS@-10V,ID@-6A<110mΩ RDS(ON), [email protected],ID@-3A<130mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead fr Pan Jit International mosfet | | |
| 6 | PJD14P10A | 100V P-Channel Enhancement Mode MOSFET PPJD14P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-14 A
Features
RDS(ON), VGS@-10V,ID@-7A<140mΩ RDS(ON), [email protected],ID@-3A<170mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compli Pan Jit International mosfet | | |
| 7 | PJD15N06L | N-Channel Enhancement Mode MOSFET
PJD15N06L
60V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@10A=40mΩ • RDS(ON), [email protected],[email protected]=50mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters Pan Jit International mosfet | |
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| Número de pieza | Descripción | Fabricantes | |
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