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PDF HTT1115E Data sheet ( Hoja de datos )
| Número de pieza | HTT1115E | |
| Descripción | Silicon NPN Epitaxial Twin Transistor | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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HTT1115E
Silicon NPN Epitaxial Twin Transistor
REJ03G0838-0200
(Previous ADE-208-1439A)
Rev.2.00
Aug.10.2005
Features
• Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm)
Q1: Equivalent Buffer transistor
2SC5700
2SC5757
Q2: Equivalent OSC transistor
Outline
RENESAS Package code: PXSF0006LA-A
(Package name: EMFPAK-6)
Pin Arrangement
6 54
Note: Marking is “F”.
1 23
B1 6 E2 5 B2 4
Q1 Q2
C1 1 E1 2 C2 3
1. Collector Q1
2. Emitter Q1
3. Collector Q2
4. Base Q2
5. Emitter Q2
6. Base Q1
www.DataSheet4U.com
Rev.2.00 Aug 10, 2005 page 1 of 8
1 page  
HTT1115E
Main Characteristics (Q2)
Typical Output Characteristics
50
450
µA
400
µA
350 µA
40 300 µA
250 µA
30 200 µA
20 150 µA
100 µA
10 IB = 50 µA
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
200
VCE = 1 V
100
0
12
5 10 20 50 100
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
20
f = 1 GHz
16 VCE = 2 V
12 VCE = 1 V
8
4
www.DataSheet4U.com
0
1
2 5 10 20 50 100
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 5 of 8
Typical Forward Transfer Characteristics
50
VCE = 1 V
40
30
20
10
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
1.6
IE = 0
f = 1 MHz
1.4
1.2
1.0
0.8
0.6
0
0.4 0.8 1.2 1.6 2.0
Collector to Base Voltage VCB (V)
S21 Parameter vs. Collector Current
20
f = 900 MHz
16
VCE = 2V
12
VCE = 1V
8
4
0
12
5 10 20 50 100
Collector Current IC (mA)
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HTT1115E.PDF ] | |
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