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부품번호 | R1LP0108E 기능 |
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기능 | 1Mb Advanced LPSRAM (128k word x 8bit) | ||
제조업체 | Renesas Technology | ||
로고 | |||
전체 17 페이지수
R1LP0108E Series
1Mb Advanced LPSRAM (128k word x 8bit)
R10DS0029EJ0200
Rev.2.00
2011.01.14
Description
The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated
by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher
density, higher performance and low power consumption. The R1LP0108E Series is suitable for memory applications
where a simple interfacing, battery operating and battery backup are the important design objectives. It has been
packaged in 32-pin SOP,32-pin TSOP and 32-pin sTSOP.
Features
• Single 4.5~5.5V power supply
• Small stand-by current: 1µA (5.0V, typical)
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1# and CS2
• Common Data I/O
• Three-state outputs: OR-tie Capability
• OE# prevents data contention on the I/O bus
www.DataSheet4U.com
R10DS0029EJ0200 Rev.2.00
2011.01.14
Page 1 of 15
R1LP0108E Series
Pin Description
Pin name
Vcc
Vss
A0 to A16
DQ0 to DQ7
CS1#
CS2
WE#
OE#
NC
Power supply
Ground
Address input
Data input/output
Chip select 1
Chip select 2
Write enable
Output enable
Non connection
Function
www.DataSheet4U.com
R10DS0029EJ0200 Rev.2.00
2011.01.14
Page 4 of 15
4페이지 R1LP0108E Series
DC Operating Conditions
Parameter
Symbol
Min.
Typ.
Max.
Supply voltage
Vcc 4.5 5.0 5.5
Vss 0 0 0
Input high voltage
VIH 2.2 - Vcc+0.3
Input low voltage
VIL -0.3 - 0.8
R Ver.
0 - +70
Ambient temperature range
Ta
I Ver.
-40 - +85
Note 1. –3.0V for pulse ≤ 30ns (full width at half maximum)
2. Ambient temperature range depends on R/I-version. Please see table on page 1.
Unit
V
V
V
V
°C
°C
Note
1
2
2
DC Characteristics
Parameter
Input leakage current
Output leakage current
Average operating current
Standby current
Standby current
Symbol
| ILI |
| ILO |
ICC1
ICC2
ISB
Min. Typ. Max. Unit
Test conditions
- - 1 μA Vin = Vss to Vcc
CS1# =VIH or CS2 =VIL or
- - 1 μA OE# =VIH,
VI/O =Vss to Vcc
Min. cycle, duty =100%, II/O = 0mA
- 25 35 mA
CS1# =VIL, CS2 =VIH, Others = VIH/VIL
Cycle =1μs, duty =100%, II/O = 0mA
- 2 5 mA CS1# ≤ 0.2V, CS2 ≥ Vcc-0.2V,
VIH ≥ Vcc-0.2V, VIL ≤ 0.2V
“CS2 =VIL” or
- - 3 mA “CS2 = VIH and CS1# =VIH”,
Others = Vss to Vcc
-
1*1
Vin = Vss to Vcc
2 μA ~+25°C
- - 3 μA ~+40°C (1) CS2 ≤ 0.2 or
ISB1 (2) CS1# ≥ Vcc-0.2V,
-
-
8 μA ~+70°C
CS2 ≥ Vcc-0.2V
- - 10 μA ~+85°C
Output high voltage
VOH
2.4 -
- V IOH = -1mA
VOH2
Vcc
- 0.5
-
- V IOH = -0.1mA
Output low voltage
VOL - - 0.4 V IOL = 2mA
Note 1. Typical parameter indicates the value for the center of distribution at 5.0V (Ta= 25ºC), and not 100% tested.
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R10DS0029EJ0200 Rev.2.00
2011.01.14
Page 7 of 15
7페이지 | |||
구 성 | 총 17 페이지수 | ||
다운로드 | [ R1LP0108E.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
R1LP0108E | 1Mb Advanced LPSRAM (128k word x 8bit) | Renesas Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |