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Número de pieza | R1LV0108E | |
Descripción | 1Mb Advanced LPSRAM (128k word x 8bit) | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de R1LV0108E (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! R1LV0108E Series
1Mb Advanced LPSRAM (128k word x 8bit)
R10DS0049EJ0200
Rev.2.00
2011.01.14
Description
The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated
by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher
density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications
where a simple interfacing, battery operating and battery backup are the important design objectives. It has been
packaged in 32-pin SOP,32-pin TSOP and 32-pin sTSOP.
Features
• Single 2.7~3.6V power supply
• Small stand-by current: 1µA (3.0V, typical)
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1# and CS2
• Common Data I/O
• Three-state outputs: OR-tie Capability
• OE# prevents data contention on the I/O bus
www.DataSheet4U.com
R10DS0049EJ0200 Rev.2.00
2011.01.14
Page 1 of 15
1 page R1LV0108E Series
Block Diagram
A0
A1
ADDRESS
BUFFER
ROW
DECODER
MEMORY ARRAY
128k-word x8-bit
A16
SENSE / WRITE AMPLIFIER
COLUMN DECODER
CLOCK
GENERATOR
WE#
CS1#
CS2
OE#
DQ
BUFFER
DQ0
DQ1
DQ7
Vcc
Vss
www.DataSheet4U.com
R10DS0049EJ0200 Rev.2.00
2011.01.14
Page 5 of 15
5 Page R1LV0108E Series
Timing Waveforms
Read Cycle
A0~16
CS1#
CS2
WE#
WE# = “H” level
VIH
OE#
DQ0~7
tRC
tCLZ1
tCLZ2
tAA
tACS1
tACS2
tOH
tCHZ1
tCHZ2
tOLZ
High impedance
tOE
tOHZ
Valid Data
www.DataSheet4U.com
R10DS0049EJ0200 Rev.2.00
2011.01.14
Page 11 of 15
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet R1LV0108E.PDF ] |
Número de pieza | Descripción | Fabricantes |
R1LV0108E | 1Mb Advanced LPSRAM (128k word x 8bit) | Renesas Technology |
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