DataSheet39.com

What is WTC2312?

This electronic component, produced by the manufacturer "Weitron Technology", performs the same function as "N-Channel Enhancement Mode Power MOSFET".


WTC2312 Datasheet PDF - Weitron Technology

Part Number WTC2312
Description N-Channel Enhancement Mode Power MOSFET
Manufacturers Weitron Technology 
Logo Weitron Technology Logo 


There is a preview and WTC2312 download ( pdf file ) link at the bottom of this page.





Total 6 Pages



Preview 1 page

No Preview Available ! WTC2312 datasheet, circuit

WTC2312
N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
Features:
1 GATE
* Super High Dense Cell Design For Low RDS(ON)
RDS(ON)<41mΩ @VGS=4.5V
RDS(ON)<47mΩ @VGS=2.5V
RDS(ON)<57mΩ @VGS=1.8V
* Capable of 2.5V gate drive
* Rugged and Reliable
* Lower On-Resistance
Application:
* Power Management in Notebook Computer.
* Portable Equipment.
* Battery Powered System.
3 DRAIN
2 SOURCE
DRAIN CURRENT
4.9 AMPERES
DRAIN SOUCE VOLTAGE
20 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3 ,VGS@4.5V(TA=25°C)
,VGS@4.5V(TA=70°C)
Pulsed Drain Current 1, 2
VGS
ID
IDM
Total Power Dissipation(TA=25°C)
Maximum Junction-ambient 3
PD
RθJA
Operating Junction Temperature Range
Storage Temperature Range
TJ
Tstg
Value
20
±8
4.9
3.4
15
0.75
140
+150
-55~+150
Unit
V
A
W
°C /W
°C
°C
Device Marking
WTC2312=N12
WEITRON
http://www.weitron.com.tw
1/6
Rev.B 04-Aug-09

line_dark_gray
WTC2312 equivalent
WTC2312
12
I D =4A
10
8
6
V DS =10V
V DS =12V
V DS =16V
4
2
0
02 4 6
8 10
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10 100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
0.01
1s
DC
0.1 1
10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1000
100
f=1.0MHz
C iss
C oss
C rss
10
1
5
9 13 17 21 25
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270ºC/W
0.001
0.0001 0.001
0.01 0.1
1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
WEITRON
http://www.weitron.com.tw
5/6
Rev.B 04-Aug-09


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for WTC2312 electronic component.


Information Total 6 Pages
Link URL [ Copy URL to Clipboard ]
Download [ WTC2312.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
WTC2310The function is Enhancement Mode Power MOSFET. Weitron TechnologyWeitron Technology
WTC2312The function is N-Channel Enhancement Mode Power MOSFET. Weitron TechnologyWeitron Technology

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

WTC2     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search