Datasheet PC1004 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	PC1004	Power Chip Inductors RoHS Power Chip Inductors Dimensions: Inches (mm) PC1004 Allied Part Number Inductance (µh) Tolerance (%) Test Freq. DCR Max. (Ω ) IDC Max. (A) Features • Unshielded SMD Power Inductor • Available in magnetically shielded • Suitable for large currents • Ideal for DC-DC converter a	Allied Components International	inductor

PC1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	PC10	PCB Relay 50 Amp Latching PCB Relay PRELIMINARY PC10 FEATURES  Energy Saving Latching Operation  50 Amp Switching Capacity  5,000 Watt Lamp Load  5 HP Motor Load  Max Inrush Current 500 Amp / 2 msec  4kV Dielectric Between Contacts and Coil  Single or Dual Coil Latching  Manual Tops	Picker	relay
2	PC100	PC100 SDRAM MODULE Preliminary KMM366S1623CT KMM366S1623CT SDRAM DIMM Preliminary PC100 SDRAM MODULE 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623CT c	Samsung semiconductor	data
3	PC100-222-620	3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 2M x 64, 2M x 72 an	Siemens Semiconductor Group	data
4	PC100-222-620	3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 2M x 64, 2M x 72 an	Siemens Semiconductor Group	data
5	PC100-222-620	3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 2M x 64, 2M x 72 an	Siemens Semiconductor Group	data
6	PC100-222-620	3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 2M x 64, 2M x 72 an	Siemens Semiconductor Group	data
7	PC100-323-620	3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 2M x 64, 2M x 72 an	Siemens Semiconductor Group	data

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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