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PDF CMNDM7001 Data sheet ( Hoja de datos )
| Número de pieza | CMNDM7001 | |
| Descripción | SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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CMNDM7001
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-953 CASE
• Device is Halogen Free by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMNDM7001
is an Enhancement-mode N-Channel MOSFET,
manufactured by the N-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers Low rDS(ON) and
Low Threshold Voltage.
MARKING CODE: AC
FEATURES:
• Low 0.5mm Package Profile
• Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953
Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
rDS(ON)
gfs
Crss
Ciss
Coss
ton
toff
VGS=10V, VDS=0
VDS=20V, VGS=0
VGS=0, ID=100μA
VDS=VGS, ID=250μA
VGS=4.0V, ID=10mA
VGS=2.5V, ID=10mA
VGS=1.5V, ID=1.0mA
VDS =10V, ID=100mA
VDS=3.0V, VGS=0, f=1.0MHz
VDS=3.0V, VGS=0, f=1.0MHz
VDS=3.0V, VGS=0, f=1.0MHz
VDD=3.0V, VGS=2.5V, ID=10mA
VDD=3.0V, VGS=2.5V, ID=10mA
20
0.6
100
20
10
100
200
250
-65 to +150
UNITS
V
V
mA
mA
mW
°C
TYP
MAX
UNITS
1.0 μA
1.0 μA
V
0.9 V
3.0 Ω
4.0 Ω
15 Ω
mS
4.0 pF
9.0 pF
9.5 pF
50 ns
75 ns
R1 (25-January 2010)
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