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PDF IPW90R1K2C3 Data sheet ( Hoja de datos )
| Número de pieza | IPW90R1K2C3 | |
| Descripción | CoolMOS Power Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPW90R1K2C3 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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CoolMOS™ Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
IPW90R1K2C3
Product Summary
V DS @ T J=25°C
R DS(on),max @T J=25°C
Q g,typ
900 V
1.2 Ω
28 nC
PG-TO247
Type
IPW90R1K2C3
Package
PG-TO247
Marking
9R1K2C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current 2)
I D,pulse
Avalanche energy, single pulse
Avalanche energy, repetitive t AR 2),3)
Avalanche current, repetitive t AR 2),3)
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
www.DataSheGeta4tUe.csoomurce voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=0.92 A, V DD=50 V
I D=0.92 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T J, T stg
Mounting torque
M3 and M3.5 screws
Value
5.1
3.2
10
68
0.31
0.92
50
±20
±30
83
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 1.0
page 1
2008-07-30
Please note the new package dimensions arccording to PCN 2009-134-A
1 page  
5 Typ. output characteristics
I D=f(V DS); T J=150 °C
parameter: V GS
7
6
5
4
3
2
1
IPW90R1K2C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T J=150 °C
parameter: V GS
20 V
10 V
8V
6 V 5.5 V
5V
4.5 V
4V
14
12
10
8
10 V
6
5V
4 4.8 V
4.5 V
4V
2
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T J); I D=2.8 A; V GS=10 V
20
3.5
0
25 0 2 4 6
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); V DS=20V
parameter: T J
15
8 10
3 25 °C
2.5
10
2
1.5
www.DataSheet4U.c1om
0.5
98 %
typ
150 °C
5
0
-60 -20 20
60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 1.0
page 5
2008-07-30
Please note the new package dimensions arccording to PCN 2009-134-A
5 Page 
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1 New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
www.DataSheet4U.com
Figure 1 Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.0, 2010-02-01
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IPW90R1K2C3.PDF ] | |
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