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PDF IPW90R800C3 Data sheet ( Hoja de datos )
| Número de pieza | IPW90R800C3 | |
| Descripción | CoolMOS Power Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPW90R800C3 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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CoolMOS™ Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
IPW90R800C3
Product Summary
V DS @ T J=25°C
R DS(on),max @ T J= 25°C
Q g,typ
900 V
0.8 Ω
42 nC
PG-TO247
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Type
IPW90R800C3
Package
PG-TO247
Marking
9R800C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
www.DataSheGeta4tUe.csoomurce voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=1.4 A, V DD=50 V
I D=1.4 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
6.9 A
4.4
15
157 mJ
0.46
1.4 A
50 V/ns
±20 V
±30
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T J, T stg
104
-55 ... 150
W
°C
Mounting torque
M3 and M3.5 screws
60 Ncm
Rev. 1.0
page 1
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
1 page  
5 Typ. output characteristics
I D=f(V DS); T J=150 °C
parameter: V GS
10
8
20 V
10 V
8V
6V
5V
4.5 V
6
IPW90R800C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T J=150 °C
parameter: V GS
10
8
10 V
6
44
4V 5V
4.8 V
4.5 V
2 2 4V
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T J); I D=4.1 A; V GS=10 V
20
2.5
0
25 0 2 4 6 8 10 12 14
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); V DS=20V
parameter: T J
20
25 °C
2
1.5
1
www.DataSheet4U.com
0.5
98 %
typ
15
10
150 °C
5
0
-60 -20 20
60 100 140 180
T J [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 1.0
page 5
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A
5 Page 
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1 New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
www.DataSheet4U.com
Figure 1 Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.0, 2010-02-01
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IPW90R800C3.PDF ] | |
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