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BD9215AFV PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD9215AFV
기능 Silicon Monolithic Integrated Circuit
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BD9215AFV 데이터시트, 핀배열, 회로
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STRUCTURE
Silicon Monolithic Integrated Circuit
NAME OF PRODUCT
DC-AC Inverter Control IC
TYPE BD9215AFV
FUNCTION
・ 36V High voltage process
・ 1ch control with Full-Bridge
・ Lamp current and voltage sense feed back control
・ Sequencing easily achieved with Soft Start Control
・ Short circuit protection with Timer Latch
・ Under Voltage Lock Out
・ Mode-selectable the operating or stand-by mode by stand-by pin
・ For master IC, Synchronous operating with slave IC
・ BURST mode controlled by PWM and DC input
・ Output liner Control by external DC voltage
○Absolute Maximum Ratings(Ta = 25℃)
Parameter
Supply Voltage
BST pin
SW pin
BST-SW voltage difference
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Power Dissipation
Symbol
VCC
BST
SW
BST-SW
Topr
Tstg
Tjmax
Pd
Limits
36
40
36
15
-40~+85
-55~+150
+150
1062*
Unit
V
V
V
V
mW
*Pd derate at 8.5mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm)
〇Operating condition
Parameter
Supply voltage
BST voltage
BST-SW voltage difference
DRIVER frequency
BCT oscillation frequency
Symbol
VCC
BST
BST-SW
FOUT
fBCT
Limits
8.5~30.0
5.0~37.5
5.0~14.0
30~110
0.05~1.00
Unit
V
V
V
kHz
kHz
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BD9215AFV pdf, 반도체, 판매, 대치품
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NOTE FOR USE
1. This product is produced with strict quality control, but might be destroyed if used beyond its absolute
maximum ratings. Once IC is destroyed, failure mode will be difficult to determine, like short mode or
open mode. Therefore, physical protection countermeasure, like fuse is recommended in case operating
conditions go beyond the expected absolute maximum ratings.
2. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is
within recommended operating range. The standard electrical characteristic values cannot be guaranteed
at other voltages in the operating ranges, however the variation will be small.
3. Mounting failures, such as misdirection or miscounts, may harm the device.
4. A strong electromagnetic field may cause the IC to malfunction.
5. The GND pin should be the location within ±0.3V compared with the PGND pin. ALL Pin (except SW1, SW2,
BST1, BST2, HN1, HN2,) Voltage should be under VCC voltage +0.3V even if the voltage is under each terminal
ratings.
6. BD9215AFV incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD
circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to
protect the IC or guarantee its operation of the thermal shutdown circuit is assumed.
7. When modifying the external circuit components, make sure to leave an adequate margin for external
components actual value and tolerance as well as dispersion of the IC.
8. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage
is switching. Make sure to leave adequate margin for this IC variation.
9. Under operating CP charge (under error mode) analog dimming and burst dimming are not operate.
10. Under operating Slow Start Control (SS is less than 1.5V), It does not operate Timer Latch.
11. By STB voltage, BD9215AFV are changed to 2 states. Therefore, do not input STB pin voltage between one
state and the other state (0.8~2.0V).
12. The pin connected a connector need to connect to the resistor for electrical surge destruction.
13. This IC is a monolithic IC which (as shown is Fig-1) has P+ substrate and between the various pins.
A P-N junction is formed from this P layer of each pin. For example, the relation between each potential
is as follows,
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can
result in mutual interference among circuits as well as operation faults and physical damage. Accordingly
you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than
the GND (P substrate) voltage to an input pin.
Resistance
(PinA)
P
P
N
P
P substrate
GND
Parasitic diode
Transistor (NPN)
(PinB)
B
C
E
N
GND
N
P substrate
GND
Parasitic diode
N
(PinB)
(PinA)
Parasitic diode
B C
E
GND
GND
Other adjacent components Parasitic diode
Fig-1 Simplified structure of a Bipolar IC
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부품번호상세설명 및 기능제조사
BD9215AFV

Silicon Monolithic Integrated Circuit

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