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BD9217F PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD9217F
기능 Silicon Monolithic Integrated Circuit
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BD9217F 데이터시트, 핀배열, 회로
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STRUCTURE
NAME OF PRODUCT
TYPE
FUNCTION
Silicon Monolithic Integrated Circuit
DC-AC Inverter Control IC
BD9217F /BD9217FV
・ 20V High voltage process
1ch control with Full-Bridge
Lamp current and voltage sense feed back control
・ Sequencing easily achieved with Soft Start Control
・ Short circuit protection with Timer Latch
・ Under Voltage Lock Out
・ Mode-selectable the operating or stand-by mode by stand-by pin
・ Automatic Judge function for External synchronization of lamp oscillation
・ BURST mode controlled by PWM and DC input
○Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply Voltage
REG PIN
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Power Dissipation
VCC
VREG
Topr
Tstg
Tjmax
Pd
20
15
-40~+85
-55~+150
+150
※11024(BD9217FV)
※2688(BD9217F)
V
V
mW
*1Pd derate at 8.2mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm)
*2Pd derate at 5.5mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm)
〇Operating condition
Parameter
Supply voltage
oscillation frequency
BCT oscillation frequency
Symbol
VCC
FOUT
FBCT
Limits
7.5 ~ 19.5
30 ~ 90
0.05 ~ 1.00
Unit
V
kHz
kHz
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BD9217F pdf, 반도체, 판매, 대치품
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〇NOTE FOR USE
1. When designing the external circuit, including adequate margins for variation between external devices and IC. Use adequate margins for steady
state and transient characteristics.
2. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended operating range. The
standard electrical characteristic values cannot be guaranteed at other voltages in the operating ranges, however the variation will be small.
3. Mounting failures, such as misdirection or miscounts, may harm the device.
4. A strong electromagnetic field may cause the IC to malfunction.
5. The GND pin should be the location within ±0.3V compared with the PGND pin.
6. If the voltage between VCC and I/O pins or GND and I/O pins is in opposite from the normal potential difference, unusual current flow into pins
may occur which can destroy the IC. To avoid such occurrence it is recommended to place protection diodes for prevention against backward
current flow.
7. BD9217F/BD9217FV incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only
to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation of the thermal shutdown
circuit is assumed.
8. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly shortened. Moreover, the
exact failure mode caused by short or open is not defined. Physical countermeasures, such as a fuse, need to be considered when using a
device beyond its maximum ratings.
9. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching. Make sure to leave
adequate margin for this IC variation.
10. By STB voltage, BD9217FV are changed to 2 states. Therefore, do not input STB pin voltage between one state and the other state (0.8~
2.0V).
11. The pin connected a connector need to connect to the resistor for electrical surge destruction.
12.This IC is a monolithic IC which (as shown is Fig.1)has P+ substrate and between the various pins. A P-N junction is formed from this P layer
of each pin. For example, the relation between each potential is as follows,
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among
circuits as well as operation faults and physical damage. Accordingly you must not use methods by which parasitic diodes operate, such as
applying a voltage that is lower than the GND (P substrate) voltage to an input pin.
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Resistance
(PinA)
P
P
N
P
P substrate
GND
Parasitic diode
Transistor (NPN)
(PinB)
B
C
E
N
GND
N
P substrate
GND
Parasitic diode
N
(PinB)
(PinA)
Parasitic diode
B C
E
GND
GND
Other adjacent cPomarpasointicendtisode
Fig.1 Simplified structure of a Bipolar IC
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부품번호상세설명 및 기능제조사
BD9217F

Silicon Monolithic Integrated Circuit

Rohm
Rohm
BD9217F

Silicon Monolithic Integrated Circuit

Rohm
Rohm

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