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BD9270F PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD9270F
기능 Silicon Monolithic Integrated Circuit
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BD9270F 데이터시트, 핀배열, 회로
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STRUCTURE
Silicon Monolithic Integrated Circuit
NAME OF PRODUCT DC-AC Inverter Control IC
TYPE BD9270F
FUNCTION
1ch control with Full-Bridge (For USE FET Body-Di)
Lamp current and voltage sense feed back control
Sequencing easily achieved with Soft Start Control
Striking time can Control independently (STRK pin)
Circuit protection with Timer Latch (COMP)
Circuit protection with quick Shutdown (COMPSD)
Mode-selectable the operating or stand-by mode by stand-by pin
Synchronous operating the other BD9270F ICs
BURST mode controlled by PWM input
Output liner Control by external DC voltage
Built-in Error mode output pin (FAIL pin)
Absolute Maximum RatingsTa = 25
Parameter
Symbol
Limits
Unit
Supply Voltage
VCC
20
V
OUTPUT DRIVER
LNx, HFNx,
20
V
Operating Temperature Range
Topr
-40+85
Storage Temperature Range
Tstg
-55+150
Maximum Junction Temperature
Tjmax
+150
Power Dissipation
Pd
688*
mW
*Pd derate at 5.5mW/for temperature above Ta = 25(When mounted on a PCB 70.0mm×70.0mm×1.6mm)
Operating condition
Parameter
Supply voltage
DRIVER frequency
Symbol
VCC
FOUT
Limits
8.519.0
30110
Unit
V
kHz
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REV. B




BD9270F pdf, 반도체, 판매, 대치품
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NOTE FOR USE
1. This product is produced with strict quality control, but might be destroyed if used beyond its absolute maximum
ratings. Once IC is destroyed, failure mode will be difficult to determine, like short mode or open mode.
Therefore, physical protection countermeasure, like fuse is recommended in case operating conditions go beyond
the expected absolute maximum ratings.
2. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within
recommended operating range. The standard electrical characteristic values cannot be guaranteed at other
voltages in the operating ranges, however the variation will be small.
3. Mounting failures, such as misdirection or miscounts, may harm the device.
4. A strong electromagnetic field may cause the IC to malfunction.
5. The GND pin should be the location within ±0.3V compared with the PGND pin. ALL Pin Voltage should be under
VCC voltage +0.3V even if the voltage is under each terminal ratings.
6. BD9270F incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD
circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect
the IC or guarantee its operation of the thermal shutdown circuit is assumed.
7. When modifying the external circuit components, make sure to leave an adequate margin for external components
actual value and tolerance as well as dispersion of the IC.
8. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage
is switching. Make sure to leave adequate margin for this IC variation.
9. Under operating CP charge (under error mode) analog dimming and burst dimming are not operate.
10. Under operating Slow Start Control (SS is less than 1.5V), It does not operate Timer Latch.
11. By STB voltage, BD9270F are changed to 2 states. Therefore, do not input STB pin voltage between one state
and the other state (0.8~2.0V).
12. The pin connected a connector need to connect to the resistor for electrical surge destruction.
13. This IC is a monolithic IC which (as shown is Fig-1) has P+ substrate and between the various pins. A P-N
junction is formed from this P layer of each pin. For example, the relation between each potential is as
follows,
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result
in mutual interference among circuits as well as operation faults and physical damage. Accordingly you must
not use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P
substrate) voltage to an input pin.
Resistance
(PinA)
P
P
N
P
P substrate
GND
Parasitic diode
Transistor (NPN)
(PinB)
B
C
E
N
GND
N
P substrate
GND
Parasitic diode
N
(PinB)
(PinA)
Parasitic diode
B C
E
GND
GND
Other adjacent components
Parasitic diode
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Fig-1 Simplified structure of a Bipolar IC
REV. B

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부품번호상세설명 및 기능제조사
BD9270F

Silicon Monolithic Integrated Circuit

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