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부품번호 | R1LV1616RSD-8S 기능 |
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기능 | 16Mb Advanced LPSRAM | ||
제조업체 | Renesas Technology | ||
로고 | |||
R1LV1616R Series
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
REJ03C0101-0400Z
Rev.4.00
2007.09.12
Description
The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and
battery backup are the important design objectives.
The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x
10.49mm with the pin-pitch of 0.4mm], a 48pin thin small outline mount device[TSOP / 12mm x 20mm with the pin-
pitch of 0.5mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8
array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed
circuit boards.
Features
• Single 2.7-3.6V power supply
• Small stand-by current:2µA (3.0V, typ.)
• Data retention supply voltage =2.0V
• No clocks, No refresh
• All inputs and outputs are TTL compatible
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie capability
• OE# prevents data contention on the I/O bus
• Process technology: 0.15um CMOS
www.DataSheet4U.com
REJ03C0101-0400Z Rev.4.00 2007.09.12
page 1 of 15
R1LV1616R Series
Pin name
A0 to A19
DQ 0 to DQ15
CS1# &CS2
WE#
OE#
LB#
UB#
Vcc
Vss
BYTE#
NC
Pin Description
Function
Address input
Data input/output
Chip select
Write enable
Output enable
Lower byte select
Upper byte select
Power supply
Ground
Byte (x8 mode) enable input
Non connection
Block Diagram
A0
A19
CS2
CS1#
LB#
UB#
BYTE#
WE#
OE#
www.DataSheet4U.com
Memory Array
1048576 Words
x 16BITS
OR
2097152 Words
x 8BITS
CLOCK
GENERATOR
x8/x16
SWITCHING
CIRCUIT
Note. BYTE# pin supported by only TSOP and uTSOP types.
REJ03C0101-0400Z Rev.4.00 2007.09.12
page 4 of 15
DQ0
DQ7
DQ8
DQ15
/ A-1
Vcc
Vss
4페이지 R1LV1616R Series
Capacitance
Parameter
Input capacitance
Input / output capacitance
Symbol
C in
C I/O
Min.
-
-
Typ.
-
-
Note 1:This parameter is sampled and not 100% tested.
Max.
10
10
Unit
pF
pF
(Ta = +25ºC, f =1MHz)
Test conditions Note
V in = 0V
1
V I/O = 0V
1
AC Characteristics
Test Conditions (Vcc=2.7~3.6V, Ta = 0~+70ºC / -40~+85ºC *)
• Input pulse levels: VIL= 0.4V,VIH=2.4V
• Input rise and fall time : 5ns
• Input and output timing reference levels : 1.4V
• Output load : See figures (Including scope and jig)
1.4V
RL=500Ω
DQ
CL=30pF
Note: Temperature range depends on R/I-version. Please see table on page 2.
www.DataSheet4U.com
REJ03C0101-0400Z Rev.4.00 2007.09.12
page 7 of 15
7페이지 | |||
구 성 | 총 16 페이지수 | ||
다운로드 | [ R1LV1616RSD-8S.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
R1LV1616RSD-8S | 16Mb Advanced LPSRAM | Renesas Technology |
R1LV1616RSD-8SI | 16Mb superSRAM | Renesas Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |