|
|
PDF K7M161835B Data sheet ( Hoja de datos )
| Número de pieza | K7M161835B | |
| Descripción | 512Kx36 & 1Mx18 Flow-Through NtRAM | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K7M161835B (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
|
No Preview Available !
K7M163635B
K7M161835B
512Kx36 & 1Mx18 Flow-Through NtRAMTM
18Mb NtRAMTM Specification
100TQFP/165FBGA with Pb/Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure couldresult in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
www.DataSheet4U*.cSoammsung Electronics reserves the right to change products or specification without notice.
Rev. 3.0 April 2006
-1-
1 page  
K7M163635B
K7M161835B
PIN CONFIGURATION(TOP VIEW)
512Kx36 & 1Mx18 Flow-Through NtRAMTM
NC/DQPc
DQc0
DQc1
VDDQ
VSSQ
DQc2
DQc3
DQc4
DQc5
VSSQ
VDDQ
DQc6
DQc7
Vss
VDD
VDD
VSS
DQd0
DQd1
VDDQ
VSSQ
DQd2
DQd3
DQd4
DQd5
VSSQ
VDDQ
DQd6
DQd7
NC/DQPd
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7M163635B(512Kx36)
80 DQPb/NC
79 DQb7
78 DQb6
77 VDDQ
76 VSSQ
75 DQb5
74 DQb4
73 DQb3
72 DQb2
71 VSSQ
70 VDDQ
69 DQb1
68 DQb0
67 VSS
66 VSS
65 VDD
64 ZZ
63 DQa7
62 DQa6
61 VDDQ
60 VSSQ
59 DQa5
58 DQa4
57 DQa3
56 DQa2
55 VSSQ
54 VDDQ
53 DQa1
52 DQa0
51 DQPa/NC
PIN NAME
SYMBOL
PIN NAME
TQFP PIN NO.
A0 - A18
Address Inputs
32,33,34,35,36,37,44
45,46,47,48,49,50,81
82,83,84,99,100
ADV
Address Advance/Load 85
WE Read/Write Control Input 88
CLK Clock
89
CKE
Clock Enable
87
CS1 Chip Select
98
CS2 Chip Select
97
CS2 Chip Select
92
BWx(x=a,b,c,d) Byte Write Inputs
93,94,95,96
OE
Output Enable
86
www.DataSZLhBZeOet4U.com
Power Sleep Mode
Burst Mode Control
64
31
SYMBOL
VDD
VSS
N.C.
DQa0~a7
DQb0~b7
DQc0~c7
DQd0~d7
DQPa~Pd
or NC
VDDQ
VSSQ
PIN NAME
TQFP PIN NO.
Power Supply(+3.3V) 15,16,41,65,91
Ground
14,17,40,66,67,90
No Connect
38,39,42,43
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
Output Power Supply 4,11,20,27,54,61,70,77
(2.5V or 3.3V)
Output Ground
5,10,21,26,55,60,71,76
Notes : 1. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
Rev. 3.0 April 2006
-5-
5 Page 
K7M163635B
K7M161835B
512Kx36 & 1Mx18 Flow-Through NtRAMTM
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Input Leakage Current(except ZZ)
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
Output Low Voltage(2.5V I/O)
Output High Voltage(2.5V I/O)
Input Low Voltage(3.3V I/O)
Input High Voltage(3.3V I/O)
Input Low Voltage(2.5V I/O)
Input High Voltage(2.5V I/O)
IIL VDD=Max ; VIN=VSS to VDD
IOL Output Disabled,
ICC
Device Selected, IOUT=0mA,
ZZ≤VIL , Cycle Time ≥ tCYC Min
-65
Device deselected, IOUT=0mA,
ISB ZZ≤VIL, f=Max,
All Inputs≤0.2V or ≥ VDD-0.2V
-65
ISB1
Device deselected, IOUT=0mA, ZZ≤0.2V, f=0,
All Inputs=fixed (VDD-0.2V or 0.2V)
ISB2
Device deselected, IOUT=0mA, ZZ≥VDD-0.2V,
f=Max, All Inputs≤VIL or ≥VIH
VOL IOL=8.0mA
VOH IOH=-4.0mA
VOL IOL=1.0mA
VOH IOH=-1.0mA
VIL
VIH
VIL
VIH
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V.
MIN
-2
-2
-
-
-
-
-
2.4
-
2.0
-0.3*
2.0
-0.3*
1.7
MAX
+2
+2
300
UNIT NOTES
µA
µA
mA 1,2
170 mA
150 mA
130 mA
0.4
-
0.4
-
0.8
VDD+0.3**
0.7
VDD+0.3**
V
V
V
V
V
V
V
V
3
3
TEST CONDITIONS
PARAMETER
Input Pulse Level(for 3.3V I/O)
Input Pulse Level(for 2.5V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 3.3/2.5V I/O)
Input and Output Timing Reference Levels for 3.3V I/O
Input and Output Timing Reference Levels for 2.5V I/O
Output Load
* The above parameters are also guaranteed at industrial temperature range.
VALUE
0 to 3.0V
0 to 2.5V
1.0V/ns
1.5V
VDDQ/2
See Fig. 1
www.DataSheet4U.com
Rev. 3.0 April 2006
- 11 -
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet K7M161835B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K7M161835B | 512Kx36 & 1Mx18 Flow-Through NtRAM | Samsung semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |