|
|
|
부품번호 | IXA12IF1200PC 기능 |
|
|
기능 | XPT IGBT | ||
제조업체 | IXYS | ||
로고 | |||
전체 5 페이지수
XPT IGBT
Copack
IXA12IF1200PC
preliminary
I C25 =
VCES
=
V =CE(sat)typ
20 A
1200 V
1.8 V
Part number
IXA12IF1200PC
C (2)
(G) 1
Features / Advantages:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
E (3)
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
Package:
● Housing: TO-263 (D2Pak)
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
IGBT
Symbol
VCES
VGES
IC25
I C90
Ptot
I CES
Definition
Collector emitter voltage
Maximum DC gate voltage
Collector current
Total power dissipation
Collector emitter leakage current
I GES
VCE(sat)
Gate emitter leakage current
Collector emitter saturation voltage
VGE(th)
Q Gon
t d(on)
tr
t d(off)
tf
Eon
Eoff
RBSOA
Gate emitter threshold voltage
Total gate charge
Turn-on delay time
Current rise time
Turn-off delay time
Current fall time
Turn-on energy per pulse
Turn-off energy per pulse
Reverse bias safe operation area
www.DSaCtaSSOheAet4US.choomrt circuit safe operation area
tSC Short circuit duration
I SC
RthJC
Short circuit current
Thermal resistance juntion to case
Conditions
VGE = 0 V
TVJ = 25°C
TVJ = 25°C
TC = 25°C
TC = 90°C
VCE = VCES ; VGE = 0 V
TVJ = 25°C
TVJ = 25°C
TVJ = 125 °C
VCE = 0 V; VGE = ±20 V
IC = 9 A; VGE = 15 V
IC = 0.3 mA; VGE = VCE
TVJ = 25°C
TVJ = 125 °C
VCE = 600 V; VGE = 15 V; IC = 10 A
Inductive load
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG= 100 Ω
VGE = 15 V; RG = 100 Ω
VCEK = 1200 V
TVJ = 125 °C
TVJ = 125°C
Ratings
min. typ. max.
1200
±20
20
13
85
0.1
0.1
500
1.8 2.1
2.1
5.5 6 6.5
27
70
40
250
100
1.1
1.1
30
Unit
V
V
A
A
W
mA
mA
nA
V
V
V
nC
ns
ns
ns
ns
mJ
mJ
A
VCE = 900 V; VGE= ±15 V
RG = 100 Ω ; non-repetitive
TVJ = 125°C
10 µs
40 A
1.5 K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20090409
20
VGE = 15 V
16
12
IC
[A] 8
4
TVJ = 25°C
TVJ = 125°C
IXA12IF1200PC
preliminary
20
VGE = 15 V
13 V
17 V
19 V
16
12
IC
TVJ = 125°C
[A] 8
11 V
9V
4
0
012
VCE [V]
Fig. 1 Typ. output characteristics
3
20
16
IC 12
[A]
8
4
TVJ = 125°C
TVJ = 25°C
0
5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
3.0
2.5
2.0
E
1.5
[mJ]
1.0
RG = 100
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Eon
Eoff
0.5
www.DataSheet4U.com
0.0
0 4 8 12 16 20
IC [A]
Fig. 5 Typ. switching energy vs. collector current
0
0123
VCE [V]
Fig. 2 Typ. output characteristics
20
IC = 10 A
VCE = 600 V
15
4
VGE
10
[V]
5
0
0 10 20
QG [nC]
Fig. 4 Typ. turn-on gate charge
30
2.0
IC = 10 A
VCE = 600 V
1.6 VGE = ±15 V
TVJ = 125°C
Eon
1.2
E
[mJ] 0.8
Eoff
0.4
0.0
80 120 160 200 240
RG [Ω]
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20090409
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ IXA12IF1200PC.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IXA12IF1200PB | XPT IGBT | IXYS |
IXA12IF1200PC | XPT IGBT | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |