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PDF SSM40T03GS Data sheet ( Hoja de datos )

Número de pieza SSM40T03GS
Descripción N-channel Enhancement-mode Power MOSFET
Fabricantes Silicon Standard 
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No Preview Available ! SSM40T03GS Hoja de datos, Descripción, Manual

SSM40T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
D
Fast switching
G
Pb-free, RoHS compliant.
S
DESCRIPTION
BVDSS
R DS(ON)
ID
The SSM40T03GS is in a TO-263 package, which is widely used for
commercial and industrial surface-mount applications. This device is
suitable for low-voltage applications such as DC/DC converters.
The through-hole version, the SSM40T03GP in TO-220, is available for
vertical-mounting, where a small footprint is required on the board, and/or
an external heatsink is to be attached.
G
DS
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID @ TC=25°C
ID @ TC=100°C
IDM
PD @ TC=25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
G
D
S
Rating
30
±25
28
24
95
31
0.25
30V
25m
28A
TO-263 (S)
TO-220(P)
Units
V
V
A
A
A
W
W/°C
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
www.DataRShΘeJeCt4U.com
RΘJA
Parameter
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance Junction-ambient
-55 to 150
-55 to 150
Value
4
62
°C
°C
Units
°C/W
°C/W
9/16/2005 Rev.3.1
www.SiliconStandard.com
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SSM40T03GS pdf
SSM40T03GP,S
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Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
9/16/2005 Rev.3.1
www.SiliconStandard.com
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